G30H603 Datasheet, Igbt, Infineon

G30H603 Features

• Igbt TRENCHSTOPTM technology offering
• very low turn-off energy
• low VCEsat
• low EMI
• maximum junction temperature 175°C
• qualified according to

PDF File Details

Part number:

G30H603

Manufacturer:

Infineon ↗

File Size:

2.01MB

Download:

📄 Datasheet

Description:

Igbt. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

G30H603 Application

• Applications
• Pb-free lead plating, halogen-free mould compound, RoHS compliant
• complete product spectrum and PSpice Models: http

TAGS

G30H603

Infineon

📁 Related Datasheet

G30H120CTW - TRENCH SCHOTTKY RECTIFIER (DIODES)
TRENCH SCHOTTKY RECTIFIER Green G30H120CTW REVERSE VOLTAGE – 120 Volts FORWARD CURRENT – 30 Amperes FEATURES • High junction temperature capability .

G30 - Voltage-Controlled Attenuator Module (MACOM)
G30/SMG30 Voltage-Controlled Attenuator Module 100 to 2000 MHz Rev. V3 Features  FAST SWITCHING: < 0.2 µsec, 10 TO 90% (TYP.) < 1 µsec, 0 TO 100% .

G3000TF250 - Anode Shorted Gate Turn-Off Thyristor (IXYS)
Date:- 5th March 2013 Data Sheet Issue:- A1 Anode Shorted Gate Turn-Off Thyristor Types G3000TF250 Absolute Maximum Ratings VDRM VRSM VDC-link VRRM.

G3000TF450 - Anode Shorted Gate Turn-Off Thyristor (IXYS)
Date:- 28th April 2013 Data Sheet Issue:- 2 Anode Shorted Gate Turn-Off Thyristor Types G3000TF450 Absolute Maximum Ratings VDRM VRSM VDC-link VRRM.

G300N04 - N-Channel Enhancement Mode Power MOSFET (GOFORD)
G300N04L N-Channel Enhancement Mode Power MOSFET Description The G300N04L uses advanced trench technology to provide excellent RDS(ON) , low gate ch.

G300N04D3 - N-Channel Enhancement Mode Power MOSFET (GOFORD)
G300N04D3 N-Channel Enhancement Mode Power MOSFET Description The G300N04D3 uses advanced trench technology to provide excellent RDS(ON) , low gate .

G300N04L - N-Channel Enhancement Mode Power MOSFET (GOFORD)
G300N04L N-Channel Enhancement Mode Power MOSFET Description The G300N04L uses advanced trench technology to provide excellent RDS(ON) , low gate ch.

G300P06 - P-Channel Enhancement Mode Power MOSFET (GOFORD)
G300P06T P-Channel Enhancement Mode Power MOSFET Description The G300P06T uses advanced trench technology to provide excellent RDS(ON) , low gate ch.

G300P06T - P-Channel Enhancement Mode Power MOSFET (GOFORD)
G300P06T P-Channel Enhancement Mode Power MOSFET Description The G300P06T uses advanced trench technology to provide excellent RDS(ON) , low gate ch.

G3018 - N-CHANNEL MOSFET (GTM)
.. Pb Free Plating Product ISSUED DATE :2005/11/30 REVISED DATE : G3018 Description Features N-CHANNEL MOSFET BVDSS RDS(ON) ID 3.