40-70 Datasheet | Specifications & PDF Download

Ordering number : ENN7047 Thick-Film Hybrid IC STK402-070 Two-Channel Class AB Audio Power Amplifier IC 40W + 40W Overview The STK402-000 series pr

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w w c . LCD Module U Specification 4 t e e h ST - 5 1 4 4 0 G L 0 7 0 H U - F W - A C a at .D Table of Contents w Type No. 1. 2. 3. 4. 5. 6. 7. 8. 9

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Data sheet acquired from Harris Semiconductor SCHS055E January 1998 - Revised September 2003 CD4070B, CD4077B CMOS Quad Exclusive-OR and Exclusive-NO

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BTS7040-1EPA PROFET™ +2 12V Smart High-Side Power Switch 1x 40 mΩ Package Marking PG-TSDSO-14 7040-1A 1 Overview Potential Applications • Suitab

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SHANGHAI SEMITECH SEMICONDUCTOR CO., LTD 4.0SMDJ Series 4000W Surface Mount Transient Voltage Suppressors Features l Peak power dissipation 4000W @10

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SHANGHAI SEMITECH SEMICONDUCTOR CO., LTD 4.0SMDJ Series 4000W Surface Mount Transient Voltage Suppressors Features l Peak power dissipation 4000W @10

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m o .c U Technical Specification LCD Module 4 t e e h T-51440GL070H-FW-AF S a at .D w w w Type No. ) ) First Edition Feb 4, 2004 Final Revision ***

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SMF4L3.3AQ - SMF4L200(C)AQ Green 400W SURFACE-MOUNT TRANSIENT VOLTAGE SUPPRESSOR Product Summary (@TA = +25°C) VBR (MIN) 4.5V to 224V IPP (MAX) 1.2

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1MBI400V-170-50 Power Module (V series) 1700V / 400A / 1-in-one package ■ Features High speed switching Voltage drive Low Inductance module structure

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BTS7040-2EPA PROFET™ +2 12V Smart High-Side Power Switch 2x 40 mΩ Package Marking PG-TSDSO-14 7040-2A 1 Overview Potential Applications • Suitab

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SHANGHAI SEMITECH SEMICONDUCTOR CO., LTD 4.0SMDJ Series 4000W Surface Mount Transient Voltage Suppressors Features l Peak power dissipation 4000W @10

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Data sheet acquired from Harris Semiconductor SCHS055E January 1998 - Revised September 2003 CD4070B, CD4077B CMOS Quad Exclusive-OR and Exclusive-NO

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SHANGHAI SEMITECH SEMICONDUCTOR CO., LTD 4.0SMDJ Series 4000W Surface Mount Transient Voltage Suppressors Features l Peak power dissipation 4000W @10

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UPA1708G-VB UPA1708G-VB Datasheet N-Channel 40-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 40 0.014 at VGS = 10 V 0.016

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2MBI400XHA170-50 Power Module (X series) 1700V / 400A / 2-in-1 package ■ Features Low V CE(sat) High speed switching Low Inductance Module structure

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Silicon Carbide (SiC) Cascode JFET - EliteSiC, Power N-Channel, TO247-3, 1700 V, 410 mohm UF3C170400K3S Description This SiC FET device is based on a

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HM70P04K-VB HM70P04K-VB Datasheet P-Channel 4 0 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = -10 V RDS(on) () at VGS

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Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N-Channel, TO-263-7, 1700 V, 410 mohm UF3C170400B7S Description This SiC FET device is based on a

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SMF4L3.3AQ - SMF4L200(C)AQ Green 400W SURFACE-MOUNT TRANSIENT VOLTAGE SUPPRESSOR Product Summary (@TA = +25°C) VBR (MIN) 4.5V to 224V IPP (MAX) 1.2

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TX70XXH series Features l Low power consumption l Low temperature coefficient l Built-in hysteresis characteristic Low Power Voltage Detector l High

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