_______________________________ FileNo.211 OOCBLJ.
RCA
40412 - Power Transistor
_______________________________ FileNo.211 OOCBLJD Solid State Division Power Transistors 40346 40346V1 40346V2 40412 40412V1 40412V2 ,~.. ..* .•.
RCA
40412V1 - Power Transistor
_______________________________ FileNo.211 OOCBLJD Solid State Division Power Transistors 40346 40346V1 40346V2 40412 40412V1 40412V2 ,~.. ..* .•.
RCA
40412V2 - Power Transistor
_______________________________ FileNo.211 OOCBLJD Solid State Division Power Transistors 40346 40346V1 40346V2 40412 40412V1 40412V2 ,~.. ..* .•.
Samsung semiconductor
K4E640412E - (K4E640412E / K4E660412E) 16M x 4bit CMOS Dynamic RAM
www.DataSheet4U.com Industrial Temperature K4E660412E,K4E640412E CMOS DRAM 16M x 4bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a .
Samsung
K4F640412D - 16M x 4bit CMOS Dynamic RAM
K4F660412D,K4F640412D 16M x 4bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION CMOS DRAM This is a family of 16,777,216 x 4 bit Fast Page Mode CM.
Samsung semiconductor
K4E660412E - (K4E640412E / K4E660412E) 16M x 4bit CMOS Dynamic RAM
www.DataSheet4U.com Industrial Temperature K4E660412E,K4E640412E CMOS DRAM 16M x 4bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a .
Texas Instruments
PTEA404120 - ISOLATED DC/DC CONVERTER
Not Recommended for New Designs PTEA404120 www.ti.com SLTS274C – DECEMBER 2006 – REVISED NOVEMBER 2010 50-W, 48-V INPUT, 12-V OUTPUT, ISOLATED DC/.
Samsung
K4E640412D - 16M x 4bit CMOS Dynamic RAM
K4E660412D,K4E640412D CMOS DRAM 16M x 4bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data .