Datasheet4U.com

K4E660412E - (K4E640412E / K4E660412E) 16M x 4bit CMOS Dynamic RAM

Samsung semiconductor

📥 Download Datasheet

K4E660412E Datasheet Preview — Preview of K4E660412E PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	K4E660412E
Manufacturer	Samsung semiconductor
File Size	230.45 KB
Description	(K4E640412E / K4E660412E) 16M x 4bit CMOS Dynamic RAM
Datasheet	K4E660412E_Samsungsemiconductor.pdf

K4E660412E Product details

Description

This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs.

Features

of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 16Mx4 EDO Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reliability.

📁 K4E660412E Similar Datasheet

K4E660412D - 16M x 4bit CMOS Dynamic RAM (Samsung)
K4E660812B - 8M x 8bit CMOS Dynamic RAM (Samsung)
K4E660812C - 8M x 8bit CMOS Dynamic RAM (Samsung)
K4E661612B - 4M x 16bit CMOS Dynamic RAM (Samsung)
K4E661612C - 4M x 16bit CMOS Dynamic RAM (Samsung)
K4E661612D - CMOS DRAM (Samsung)
K4E640412D - 16M x 4bit CMOS Dynamic RAM (Samsung)
K4E640812B - 8M x 8bit CMOS Dynamic RAM (Samsung)

Other Datasheets by Samsung semiconductor

K4E660812E - (K4E640812E / K4E660812E) 8M x 8bit CMOS Dynamic RAM with Extended Data Out
K4E640412E - (K4E640412E / K4E660412E) 16M x 4bit CMOS Dynamic RAM
K4E640812E - (K4E640812E / K4E660812E) 8M x 8bit CMOS Dynamic RAM with Extended Data Out

Published: Apr 9, 2007 |