K4E660412E Datasheet - Samsung semiconductor

K4E660412E, (K4E640412E / K4E660412E) 16M x 4bit CMOS Dynamic RAM

www.DataSheet4U.com Industrial Temperature K4E660412E,K4E640412E CMOS DRAM 16M x 4bit CMOS Dynamic RAM with Extended Data Out .
This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs.

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Datasheet Details

Part number:

K4E660412E

Manufacturer:

Samsung semiconductor

File Size:

230.45 KB

Description:

(K4E640412E / K4E660412E) 16M x 4bit CMOS Dynamic RAM

Features

* of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 16Mx4 EDO Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power c

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K4E660412E K4E640412E K4E660412E 16M 4bit CMOS Dynamic RAM Samsung semiconductor

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