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K4E640812B - 8M x 8bit CMOS Dynamic RAM

Samsung

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Datasheet Details

Part number	K4E640812B
Manufacturer	Samsung
File Size	416.71 KB
Description	8M x 8bit CMOS Dynamic RAM
Datasheet	K4E640812B_Samsungsemiconductor.pdf

K4E640812B Product details

Description

This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs.

Features

of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 8Mx8 EDO Mode DRAM family is fabricated using Samsung ′s advanced CMOS process to realize high band-width, low power consumption and high reliability.

📁 K4E640812B Similar Datasheet

K4E640812E - (K4E640812E / K4E660812E) 8M x 8bit CMOS Dynamic RAM with Extended Data Out (Samsung semiconductor)
K4E640412E - (K4E640412E / K4E660412E) 16M x 4bit CMOS Dynamic RAM (Samsung semiconductor)
K4E660412E - (K4E640412E / K4E660412E) 16M x 4bit CMOS Dynamic RAM (Samsung semiconductor)
K4E660812E - (K4E640812E / K4E660812E) 8M x 8bit CMOS Dynamic RAM with Extended Data Out (Samsung semiconductor)

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Published: Apr 25, 2005 |