K4E660812E, K4E640812E Datasheet - Samsung semiconductor

K4E660812E, K4E640812E, (K4E640812E / K4E660812E) 8M x 8bit CMOS Dynamic RAM with Extended Data Out

K4E660812E,K4E640812E CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Extended Data Out .
This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs.

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K4E640812E_Samsungsemiconductor.pdf

K4E660812E Datasheet Preview — This datasheet PDF includes multiple part numbers: K4E660812E, K4E640812E. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

K4E660812E, K4E640812E

Manufacturer:

Samsung semiconductor

File Size:

190.72 KB

Description:

(K4E640812E / K4E660812E) 8M x 8bit CMOS Dynamic RAM with Extended Data Out

Note:

This datasheet PDF includes multiple part numbers: K4E660812E, K4E640812E.
Please refer to the document for exact specifications by model.

Features

* of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 8Mx8 EDO Mode DRAM family is fabricate d using Samsung ′s advanced CMOS process to realize high band-width, low power

K4E660812E Distributors

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