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K4E660812E, K4E640812E - (K4E640812E / K4E660812E) 8M x 8bit CMOS Dynamic RAM with Extended Data Out

Samsung semiconductor

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K4E660812E Datasheet Preview — This datasheet PDF includes multiple part numbers: K4E660812E, K4E640812E. Please refer to the document for exact specifications by model.

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Datasheet Details

Part number	K4E660812E, K4E640812E
Manufacturer	Samsung semiconductor
File Size	190.72 KB
Description	(K4E640812E / K4E660812E) 8M x 8bit CMOS Dynamic RAM with Extended Data Out
Datasheet	K4E640812E_Samsungsemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: K4E660812E, K4E640812E. Please refer to the document for exact specifications by model.

K4E660812E Product details

Description

This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs.

Features

of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 8Mx8 EDO Mode DRAM family is fabricate d using Samsung ′s advanced CMOS process to realize high band-width, low power consumption and high reliability.

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Other Datasheets by Samsung semiconductor

K4E660412E - (K4E640412E / K4E660412E) 16M x 4bit CMOS Dynamic RAM
K4E640412E - (K4E640412E / K4E660412E) 16M x 4bit CMOS Dynamic RAM
K4E640812E - (K4E640812E / K4E660812E) 8M x 8bit CMOS Dynamic RAM with Extended Data Out

Published: Sep 27, 2005 |