K4E660812E Features
* of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 8Mx8 EDO Mode DRAM family is fabricate d using Samsung ′s advanced CMOS process to realize high band-width, low power
K4E640812E_Samsungsemiconductor.pdf
Datasheet Details
K4E660812E, K4E640812E
Samsung semiconductor
190.72 KB
(k4e640812e / k4e660812e) 8m x 8bit cmos dynamic ram with extended data out.
This datasheet PDF includes multiple part numbers: K4E660812E, K4E640812E.
Please refer to the document for exact specifications by model.
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