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K4E660412D - 16M x 4bit CMOS Dynamic RAM

Datasheet Summary

Description

This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs.

Extended Data Out Mode offers high speed random access of memory cells within the same row.

Refresh cycle(4K Ref.

Features

  • of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 16Mx4 EDO Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reliability.

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Datasheet Details

Part number K4E660412D
Manufacturer Samsung
File Size 415.95 KB
Description 16M x 4bit CMOS Dynamic RAM
Datasheet download datasheet K4E660412D Datasheet
Additional preview pages of the K4E660412D datasheet.

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Full PDF Text Transcription

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K4E660412D,K4E640412D CMOS DRAM 16M x 4bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 16Mx4 EDO Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reliability. FEATURES • Part Identification - K4E660412D-JC/L(3.3V, 8K Ref.
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