Part number:
K4E661612B
Manufacturer:
Samsung
File Size:
885.22 KB
Description:
4m x 16bit cmos dynamic ram.
* of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx16 EDO Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power c
K4E661612B Datasheet (885.22 KB)
K4E661612B
Samsung
885.22 KB
4m x 16bit cmos dynamic ram.
📁 Related Datasheet
K4E661612C 4M x 16bit CMOS Dynamic RAM (Samsung)
K4E661612D CMOS DRAM (Samsung)
K4E660412D 16M x 4bit CMOS Dynamic RAM (Samsung)
K4E660412E (K4E640412E / K4E660412E) 16M x 4bit CMOS Dynamic RAM (Samsung semiconductor)
K4E660812B 8M x 8bit CMOS Dynamic RAM (Samsung)
K4E660812C 8M x 8bit CMOS Dynamic RAM (Samsung)
K4E660812E (K4E640812E / K4E660812E) 8M x 8bit CMOS Dynamic RAM with Extended Data Out (Samsung semiconductor)
K4E640412D 16M x 4bit CMOS Dynamic RAM (Samsung)
K4E640412E (K4E640412E / K4E660412E) 16M x 4bit CMOS Dynamic RAM (Samsung semiconductor)
K4E640812B 8M x 8bit CMOS Dynamic RAM (Samsung)