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K4E640812E - (K4E640812E / K4E660812E) 8M x 8bit CMOS Dynamic RAM with Extended Data Out

Datasheet Summary

Description

This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs.

Extended Data Out Mode offers high speed random access of memory cells within the same row.

Refresh cycle(4K Ref.

Features

  • of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 8Mx8 EDO Mode DRAM family is fabricate d using Samsung ′s advanced CMOS process to realize high band-width, low power consumption and high reliability.

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Datasheet Details

Part number K4E640812E
Manufacturer Samsung semiconductor
File Size 190.72 KB
Description (K4E640812E / K4E660812E) 8M x 8bit CMOS Dynamic RAM with Extended Data Out
Datasheet download datasheet K4E640812E Datasheet
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K4E660812E,K4E640812E CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption( Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 8Mx8 EDO Mode DRAM family is fabricate d using Samsung ′s advanced CMOS process to realize high band-width, low power consumption and high reliability. FEATURES • Part Identification - K4E660812E-JC/L(3.3V, 8K Ref.
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