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K4E641612C - 4M x 16bit CMOS Dynamic RAM

Datasheet Summary

Description

This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs.

Extended Data Out Mode offers high speed random access of memory cells within the same row.

Refresh cycle(4K Ref.

Features

  • of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx16 EDO Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reliability.

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Datasheet Details

Part number K4E641612C
Manufacturer Samsung
File Size 884.03 KB
Description 4M x 16bit CMOS Dynamic RAM
Datasheet download datasheet K4E641612C Datasheet
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K4E661612C,K4E641612C CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx16 EDO Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reliability. FEATURES • Part Identification - K4E661612C-TC/L(3.3V, 8K Ref.
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