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K4E641612B - 4M x 16bit CMOS Dynamic RAM

Samsung

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Datasheet Details

Part number	K4E641612B
Manufacturer	Samsung
File Size	885.22 KB
Description	4M x 16bit CMOS Dynamic RAM
Datasheet	K4E641612B_Samsungsemiconductor.pdf

K4E641612B Product details

Description

This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs.

Features

of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx16 EDO Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reliability.

📁 K4E641612B Similar Datasheet

K4E640412E - (K4E640412E / K4E660412E) 16M x 4bit CMOS Dynamic RAM (Samsung semiconductor)
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K4E660412E - (K4E640412E / K4E660412E) 16M x 4bit CMOS Dynamic RAM (Samsung semiconductor)
K4E660812E - (K4E640812E / K4E660812E) 8M x 8bit CMOS Dynamic RAM with Extended Data Out (Samsung semiconductor)

Other Datasheets by Samsung

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Published: Apr 25, 2005 |