40N03 Datasheet | Specifications & PDF Download

SID40N03 Elektronische Bauelemente 36A, 30V,RDS(ON)21m N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The SID40N03 pr

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Advanced Power Electronics Corp. AP40N03GP RoHS-compliant Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Simple Drive Requireme

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UNISONIC TECHNOLOGIES CO., LTD UT40N03 40 Amps, 30 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION Power MOSFET The UT40N03 power MOSFET provide the desi

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SSM40N03P N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate charge Simple drive requirement Fast switching G D S BVDSS R DS(ON) ID TO-220 30V 17mΩ 4

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N-Channel 30-V (D-S) MOSFET DTL40N03 www.din-tek.jp PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.007at VGS = 10 V 30 0.010 at VGS = 4.5 V TO-251 ID (A

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UNISONIC TECHNOLOGIES CO., LTD UTT40N03 40A, 30V N-CHANNEL POWER MOSFET Power MOSFET  DESCRIPTION The UTT40N03 power MOSFET provide the designer wi

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Description AP240N03NF 30V N-Channel Enhancement Mode MOSFET The AP240N03NF uses advanced APM-SGT V technology to provide excellent RDS(ON), low gat

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www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/01/25 REVISED DATE :2005/12/12B GE40N03 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS

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GOFORD N-Channel Enhancement Mode Power MOSFET Description The G40N03A uses advanced trench technology and design to provide excellent RDS(ON) with lo

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Description AP140N03NF 35V N-Channel Enhancement Mode MOSFET The AP140N03NF uses advanced APM-SGT V technology to provide excellent RDS(ON), low gat

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www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/01/25 REVISED DATE :2005/12/12B GU40N03 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS

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UNISONIC TECHNOLOGIES CO., LTD UT40N03T 30V, 28A N-CHANNEL ENHANCEMENT MODE POWER MOSFET  FEATURES * RDS(ON) < 25mΩ @VGS = 10 V * Low capacitance * O

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D56 / www.daysemi.jp N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.0057 at VGS = 10 V 0.0076 at VGS = 4.5 V ID (A)a 40 13.8

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AP40N03GH/J-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ R

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Advanced Power Electronics Corp. AP40N03GH/J-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Fast Switching Characteristics Lo

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NTD40N03R Power MOSFET 45 A, 25 V, N−Channel DPAK Features • Planar HD3e Process for Fast Switching Performance • Low RDS(on) to Minimize Conduction

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RSS140N03 Transistor Switching (30V, ±14A) RSS140N03 zFeatures 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Pac

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NTD40N03R Power MOSFET 45 Amps, 25 Volts N−Channel DPAK Features • • • • • • Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minim

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www.DataSheet4U.com RTR040N03 Transistors Switching (30V, 4.0A) RTR040N03 zFeatures 1) Low On-resistance. 2) Built-in G-S Protection Diode. 3) Small

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AP40N03GH/J Pb Free Plating Product Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching G S D N-CHANNEL E

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