VCES Low VCE(sat) IGBT High Speed IGBT IXSH/IXSM 4.
Silan
40N60NPFD - 600V FIELD STOP IGBT
SGT40N60NPFDPN_Datasheet 40A, 600V FIELD STOP IGBT DESCRIPTION SGT40N60NPFDPN using Field Stop IGBT technology, offer the optimum performance for indu.
TRinno
TGAN40N60F2DS - Field Stop Trench IGBT
Features • 600V Fast Field Stop Trench Technology • Low Switching Loss for a Wide Temperature Range • Positive Temperature Coefficient • Easy Parallel.
Fairchild Semiconductor
G40N60 - Ultrafast IGBT
SGH40N60UFD SGH40N60UFD Ultra-Fast IGBT IGBT General Description Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low .
TRinno
TGAN40N60FD - Field Stop Trench IGBT
Features • 600V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operation.
Fairchild Semiconductor
FGH40N60SFD - 40A Field Stop IGBT
FGH40N60SFD — 600 V, 40 A Field Stop IGBT March 2015 FGH40N60SFD 600 V, 40 A Field Stop IGBT Features • High Current Capability • Low Saturation Vo.
IXYS Corporation
40N60 - IXSH40N60
VCES Low VCE(sat) IGBT High Speed IGBT IXSH/IXSM 40 N60 IXSH/IXSM 40 N60A 600 V 600 V I C25 75 A 75 A VCE(sat) 2.5 V 3.0 V Short Circuit SOA Capabi.
Silan
SGT40N60FD1P7 - 600V IGBT
Silan Microelectronics SGT40N60FD1P7_Datasheet 40A, 600V IGBT DESCRIPTION SGT40N60FD1P7 using Punch Through IGBT technology, offer the optimum perfo.
ON Semiconductor
NGTB40N60IHLWG - IGBT
NGTB40N60IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provi.
Advanced Power Technology
APT40N60B2CF - Super Junction FREDFET
600V 40A 0.110Ω APT40N60B2CF APT40N60LCF APT40N60B2CFG* APT40N60LCFG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. C O OLMOS Power Semiconduct.
Advanced Power Technology
APT40N60JCU2 - ISOTOP Boost chopper Super Junction MOSFET Power Module
APT40N60JCU2 ISOTOP® Boost chopper Super Junction MOSFET Power Module K VDSS = 600V RDSon = 70mW max @ Tj = 25°C ID = 40A @ Tc = 25°C Application · A.
IXYS Corporation
IXGM40N60 - High speed IGBT
Low VCE(sat) IGBT High speed IGBT IXGH/IXGM 40 N60 IXGH/IXGM 40 N60A VCES 600 V 600 V IC25 75 A 75 A VCE(sat) 2.5 V 3.0 V Symbol Test Conditions.
IXYS
IXGH40N60B2D1 - IGBT
HiPerFASTTM IGBT Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Preliminary Data Sheet IXGH 40N60B2D1 IXGT 40N60B2D1 V .
Infineon
IGW40N60DTP - IGBT
IGBT TRENCHSTOPTM Performance technology IGW40N60DTP 600V IGBT TRENCHSTOPTM Performance series Data sheet Industrial Power Control IGW40N60TP TRENCHS.
ON Semiconductor
FGH40N60SMD-F085 - IGBT
IGBT - Field Stop 600 V, 40 A FGH40N60SMD-F085 Description Using Novel Field Stop IGBT Technology, onsemi’s new series of Field Stop IGBTs offer the .
ON Semiconductor
FGH40N60SMDF - IGBT
IGBT - Field Stop 600 V, 40 A FGH40N60SMDF Description Using Novel Field Stop IGBT Technology, ON Semiconductor’s new series of field stop 2nd generat.
STMicroelectronics
40N60M2 - N-Channel MOSFET
STWA40N60M2 Datasheet N-channel 600 V, 78 mΩ typ., 34 A MDmesh M2 Power MOSFET in a TO-247 long leads package D(2, TAB) G(1) Features Order code ST.
ON Semiconductor
NGTB40N60FLWG - IGBT
NGTB40N60FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior per.
Fairchild Semiconductor
HGTG40N60A4 - N-Channel IGBT
HGTG40N60A4 Data Sheet August 2003 File Number 600V, SMPS Series N-Channel IGBT The HGTG40N60A4 is a MOS gated high voltage switching device combinin.
ETC
IXSH40N60 - High Speed IGBT
High Speed IGBT Short Circuit SOA Capability IXSH 40N60B VCES = = IXST 40N60B IC25 VCE(sat) = tfi typ = 600V 75A 2.2V 100 ns Preliminary data Symbo.