40N60 Datasheet | Specifications & PDF Download

SGT40N60NPFDPN_Datasheet 40A, 600V FIELD STOP IGBT DESCRIPTION SGT40N60NPFDPN using Field Stop IGBT technology, offer the optimum performance for indu

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SGH40N60UFD SGH40N60UFD Ultra-Fast IGBT IGBT General Description Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low

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VCES Low VCE(sat) IGBT High Speed IGBT IXSH/IXSM 40 N60 IXSH/IXSM 40 N60A 600 V 600 V I C25 75 A 75 A VCE(sat) 2.5 V 3.0 V Short Circuit SOA Capabi

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Features • 600V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operation

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Features • 600V Fast Field Stop Trench Technology • Low Switching Loss for a Wide Temperature Range • Positive Temperature Coefficient • Easy Parallel

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FGH40N60SFD — 600 V, 40 A Field Stop IGBT March 2015 FGH40N60SFD 600 V, 40 A Field Stop IGBT Features • High Current Capability • Low Saturation Vo

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FGA40N60UFD IGBT FGA40N60UFD Ultrafast IGBT General Description Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low con

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IGW40N60F General Description： Using advanced IGBT technology, the 600V IGBT. Offers superior conduction and switching performances. Lead Free Packa

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NGTB40N60FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior per

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STWA40N60M2 Datasheet N-channel 600 V, 78 mΩ typ., 34 A MDmesh M2 Power MOSFET in a TO-247 long leads package D(2, TAB) G(1) Features Order code ST

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SGT40N60NPFDPN_Datasheet 40A, 600V FIELD STOP IGBT DESCRIPTION SGT40N60NPFDPN using Field Stop IGBT technology, offer the optimum performance for indu

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FGH40N60SFD — 600 V, 40 A Field Stop IGBT March 2015 FGH40N60SFD 600 V, 40 A Field Stop IGBT Features • High Current Capability • Low Saturation Vo

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HGT1N40N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT1N40N60A4D is a MOS gated high volt

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STB40N60M2, STP40N60M2, STW40N60M2 N-channel 600 V, 0.078 Ω typ., 34 A MDmesh II Plus™ low Qg 2 Power MOSFETs in D PAK, TO-220 and TO-247 packages Dat

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NGTB40N60FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior per

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IGBT - Field Stop 600 V, 40 A FGH40N60SMD-F085 Description Using Novel Field Stop IGBT Technology, onsemi’s new series of Field Stop IGBTs offer the

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Low VCE(sat) IGBT High speed IGBT IXGH/IXGM 40 N60 IXGH/IXGM 40 N60A VCES 600 V 600 V IC25 75 A 75 A VCE(sat) 2.5 V 3.0 V Symbol Test Conditions

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ADVANCE INFORMATION HiPerFETTM Power MOSFET Single MOSFET Die www.DataSheet4U.com VDSS I D25 43A 40A 43A 40A RDS(on) 0.13W 0.15W 0.13W 0.15W trr

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HGTG40N60A4 Data Sheet August 2003 File Number 600V, SMPS Series N-Channel IGBT The HGTG40N60A4 is a MOS gated high voltage switching device combinin

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600V, 40A, Trench NPT IGBT Features  600V,40A  VCE(sat)(typ.)=2.15V@VGE=15V,IC=40A  High speed switching  Higher system efficiency  Soft current

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