40N60 Datasheet | Specifications & PDF Download

SGT40N60NPFDPN_Datasheet 40A, 600V FIELD STOP IGBT DESCRIPTION SGT40N60NPFDPN using Field Stop IGBT technology, offer the optimum performance for indu

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SGH40N60UFD SGH40N60UFD Ultra-Fast IGBT IGBT General Description Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low

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VCES Low VCE(sat) IGBT High Speed IGBT IXSH/IXSM 40 N60 IXSH/IXSM 40 N60A 600 V 600 V I C25 75 A 75 A VCE(sat) 2.5 V 3.0 V Short Circuit SOA Capabi

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FGH40N60SFD — 600 V, 40 A Field Stop IGBT March 2015 FGH40N60SFD 600 V, 40 A Field Stop IGBT Features • High Current Capability • Low Saturation Vo

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Features • 600V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operation

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FGA40N60UFD IGBT FGA40N60UFD Ultrafast IGBT General Description Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low con

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Features • 600V Fast Field Stop Trench Technology • Low Switching Loss for a Wide Temperature Range • Positive Temperature Coefficient • Easy Parallel

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IGW40N60F General Description： Using advanced IGBT technology, the 600V IGBT. Offers superior conduction and switching performances. Lead Free Packa

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NGTB40N60FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior per

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HGTG40N60A4 Data Sheet August 2003 File Number 600V, SMPS Series N-Channel IGBT The HGTG40N60A4 is a MOS gated high voltage switching device combinin

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S E M I C O N D U C T O R HGTG40N60B3 70A, 600V, UFS Series N-Channel IGBT Package JEDEC STYLE TO-247 E C G PRELIMINARY May 1995 Features • 70A, 60

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MOSFET - Power, Single N-Channel, SUPERFET) V, FRFET), TO247-3L 600 V, 40 mW, 59 A NVHL040N60S5F Description The SUPERFET V MOSFET FRFET series has

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FGH40N60SFD — 600 V, 40 A Field Stop IGBT March 2015 FGH40N60SFD 600 V, 40 A Field Stop IGBT Features • High Current Capability • Low Saturation Vo

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ADVANCE INFORMATION HiPerFETTM Power MOSFET Single MOSFET Die www.DataSheet4U.com VDSS I D25 43A 40A 43A 40A RDS(on) 0.13W 0.15W 0.13W 0.15W trr

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HiPerFASTTM IGBTs w/ Diode C2-Class High Speed IGBTs IXGT40N60C2D1 IXGJ40N60C2D1 IXGH40N60C2D1 VCES = IC110 = ≤VCE(SAT) tfi(typ) = 600V 40A 2.7

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SGT40N60NPFDPN_Datasheet 40A, 600V FIELD STOP IGBT DESCRIPTION SGT40N60NPFDPN using Field Stop IGBT technology, offer the optimum performance for indu

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SEMICONDUCTOR TECHNICAL DATA General Description KEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit rugg

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HGTG40N60C3 Data Sheet December 2001 75A, 600V, UFS Series N-Channel IGBT The HGTG40N60C3 is a MOS gated high voltage switching device combining the

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HiPerFASTTM IGBT ISOPLUS247TM IXGR 40N60C2 IXGR 40N60C2D1 VCES IC25 C2-Class High Speed IGBTs (Electrically Isolated Back Surface) Preliminary Data

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HiPerFAST TM IGBT C2-Class High Speed IGBTs IXGH 40N60C2 IXGT 40N60C2 VCES IC25 VCE(sat) tfi typ www.DataSheet4U.com = 600 V = 75 A = 2.7 V = 3

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