411D Datasheet | Specifications & PDF Download

Transistors with built-in Resistor UN4111/4112/4113/4114/4115/4116/4117/4118/ 4119/4110/411D/411E/411F/411H/411L Silicon PNP epitaxial planer transis

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K4E170411D, K4E160411D K4E170412D, K4E160412D CMOS DRAM 4M x 4Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4.194,304

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K4F170411D, K4F160411D K4F170412D, K4F160412D CMOS DRAM 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4

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K4F170411D, K4F160411D K4F170412D, K4F160412D CMOS DRAM 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4

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Si8411DB New Product Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) −20 FEATURES ID (A) −5.9 −5.0 rDS(on) (W) 0.054 @ VGS =

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ㅛ Semiconductor SDP411D Band switching Diode Features • Extremely small size package: 1.7×1.25×0.9 ㎜ Typ. • VHF tuner band switch applications. • Ve

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www.DataSheet4U.com ® RF1411D 869.2625 MHz SAW Filter • • • • Ideal Front-End Filter for European Wireless Receivers Low-Loss, Coupled-Resonator Q

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RB411DS Features • Lead Free Finish/RoHS Compliant ( P Suffix Designates RoHS Compliant. See Ordering Information) • Small Surface Mounting Type • L

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Series 411 SPDT Non-Latching Established Reliability / Military Relay ESTABLISHED RELIABILITY MILITARY TO-5 RELAYS SPDT SERIES 411 411D 411DD 411T

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RB411D Schottky Barrier Diode VOLTAGE 40Volts POWER FEATURES High Reliability Low Reverse Current Ultra High-speed Switching MECHANICAL DATA Cas

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes RB411D SCHOTTKY BARRIER DIODE SOT-23 FEATURES z Small Surface

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Data Sheet Schottky Barrier Diode RB411D Applications Low current rectification Dimensions (Unit : mm) Land size figure (Unit : mm) 1.9 0. 3～

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www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/10/02 REVISED DATE : GSC4411DY P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON)

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Si4411DY Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) 0.010 at VGS = - 10 V 0.0155 at VGS = - 4.5 V ID (A)

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FT04 D HIGH COMMUTATION TRIAC DPAK (Plastic) MT1 MT2 G MT2 On-State Current 4 Amp Gate Trigger Current £ 35 mA Off-State Voltage 200 V ÷ 800 V

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HAN3311D5 Thru HAN3611D5 1-Line Uni-directional TVS Diode Array APPLICATION ◆Cellular Handsets and Accessories ◆Personal Digital Assistants ◆Notebook

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Series 411 SPDT Non-Latching Established Reliability / Military Relay ESTABLISHED RELIABILITY MILITARY TO-5 RELAYS SPDT SERIES 411 411D 411DD 411T

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P-Channel 20-V (D-S) MOSFET Si7411DN Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.019 at VGS = - 4.5 V - 20 0.025 at VGS = - 2.5 V 0.0

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DS1411 Serial Port iButton ™ Holder www.dalsemi.com FEATURES Small size, true-ground interface to an RS232 COM Port for reading and writing iButton d

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Green Product STU411D Ver 1.1 S a mHop Microelectronics C orp. Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRODUCT SUMMARY (N-C

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