4410 Datasheet | Specifications & PDF Download

Shenzhen Tuofeng Semiconductor Technology co., LTD N-Channel Enhancement-Mode MOSFET (30V, 10A) PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max 30V

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Green Product S DM4410 Mar.01,2006 ver1.2 S amHop Microelectronics C orp. N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR

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www.MICROSEMI.com GC4410 – GC4495 TM ® CONTROL DEVICES – HIGH VOLTAGE PIN DIODES RoHS Compliant DESCRIPTION The GC4400 series are high voltage,

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CEM4410A N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 10A, RDS(ON) = 11mΩ @VGS = 10V. RDS(ON) = 20mΩ @VGS = 4.5V. Super high dens

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www.DataSheet4U.com 0.4 INCH (10.1MM) TWO DIGIT STICK DISPLAY DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

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www.DataSheet4U.com WT4410M Surface Mount N-Channel Enhancement Mode MOSFET P b Lead(Pb)-Free DRAIN CURRENT 10 AMPERES DRAIN SOURCE V OLTAGE 30 VOLTA

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UNISONIC TECHNOLOGIES CO., LTD UT4410 N-CHANNEL 30-V (D-S) MOSFET „ DESCRIPTION Power MOSFET As advanced N-channel logic level enhancement MOSFET, t

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AUTOMOTIVE GRADE PD - 96405A AUIRFS4410Z Features AUIRFSL4410Z l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperatu

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Isc N-Channel MOSFET Transistor IRFS4410Z ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·1

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor NPN Silicon 2N4410 COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol Value

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N4410/D Amplifier Transistor NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 2N4410 1 2 3

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2N4410 Discrete POWER & Signal Technologies 2N4410 C BE TO-92 NPN General Purpose Amplifier This device is designed for use as general purpose a

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April 1998 FDS4410 Single N-Channel Logic Level PWM Optimized PowerTrenchTM MOSFET General Description This N-Channel Logic Level MOSFET has been des

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N-Channel 30-V (D-S) MOSFET Si4410BDY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 0.0135 at VGS = 10 V 0.020 at VGS = 4.5 V ID (A) 1

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