AO4410
Description
The AO4410 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideally suited for use as a low side switch in Notebook CPU core power conversion.
Product Summary
VDS (V) = 30V
ID = 18A
(VGS = 10V)
RDS(ON) < 5.5mΩ (VGS = 10V)
RDS(ON) < 6.2mΩ (VGS = 4.5V)
100% UIS Tested 100% Rg Tested
Top View
SOIC-8 Bottom View
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain TA=25°C
Current AF
TA=70°C
Pulsed Drain Current B
ID IDM
TA=25°C
Power Dissipation TA=70°C Avalanche Current B Repetitive avalanche energy 0.3m H B
IAR EAR
Junction and Storage Temperature Range TJ, TSTG
Maximum 30 ±12 18 15 80 3 2.1 30 135
-55 to 150
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C t...
