Datasheet Details
| Part number | AO4419 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 245.53 KB |
| Description | 30V P-Channel MOSFET |
| Datasheet | AO4419_AlphaOmegaSemiconductors.pdf |
|
|
Overview: AO4419 30V P-Channel MOSFET General.
| Part number | AO4419 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 245.53 KB |
| Description | 30V P-Channel MOSFET |
| Datasheet | AO4419_AlphaOmegaSemiconductors.pdf |
|
|
|
The AO4419 bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).
This device is ideal for load switch and battery protection applications.
Product Summary VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS = -4.5V) 100% UIS Tested 100% Rg Tested -30V -9.7A < 20mW < 35mW SOIC-8 D Top View Bottom View D D D D G S S S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Maximum Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±20 Continuous Drain Current TA=25°C TA=70°C ID -9.7 -7.8 Pulsed Drain Current C IDM -70 Avalanche Current C IAS, IAR -27 Avalanche energy L=0.1mH C EAS, EAR 36 TA=25°C Power Dissipation B TA=70°C PD 3.1 2 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 31 59 Maximum Junction-to-Lead Steady-State RqJL 16 Max 40 75 24 Units V V A A mJ W °C Units °C/W °C/W °C/W Rev 6.1: March 2024 .aosmd.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AO4419 | P-Channel MOSFET | Kexin |
| Part Number | Description |
|---|---|
| AO4410 | 30V N-Channel MOSFET |
| AO4411 | 30V P-Channel MOSFET |
| AO4412 | N-Channel FET |
| AO4413 | 30V P-Channel MOSFET |
| AO4413A | P-Channel FET |
| AO4414 | N-Channel FET |
| AO4414A | N-Channel FET |
| AO4415 | P-Channel FET |
| AO4418 | N-Channel FET |
| AO4400 | N-Channel MOSFET |