Datasheet Summary
June 2002
AO4413 P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4413 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.
Features
VDS (V) = -30V ID = -15A RDS(ON) < 7mΩ (VGS = -20V) RDS(ON) < 8.5mΩ (VGS = -10V)
SOIC-8 Top View
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