Datasheet Details
| Part number | AO4411 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 322.44 KB |
| Description | 30V P-Channel MOSFET |
| Datasheet | AO4411_AlphaOmegaSemiconductors.pdf |
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Overview: AO4411 30V P-Channel MOSFET General.
| Part number | AO4411 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 322.44 KB |
| Description | 30V P-Channel MOSFET |
| Datasheet | AO4411_AlphaOmegaSemiconductors.pdf |
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Product Summary The AO4411 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge.
This device is suitable for use as a load switch or in PWM applications.
VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS = -4.5V) 100% UIS Tested 100% Rg Tested -30V -8A < 32mW < 55mW SOIC-8 D Top View Bottom View D D D D G S S S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Maximum Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±20 Continuous Drain Current TA=25°C TA=70°C ID -8 -6.6 Pulsed Drain Current C IDM -40 Avalanche Current C IAS, IAR 23 Avalanche energy L=0.1mH C EAS, EAR 26 TA=25°C Power Dissipation B TA=70°C PD 3.1 2 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 31 59 Maximum Junction-to-Lead Steady-State RqJL 16 Max 40 75 24 Units V V A A mJ W °C Units °C/W °C/W °C/W Rev 11.1: August 2023 .aosmd.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AO4411 | P-Channel MOSFET | Kexin |
| Part Number | Description |
|---|---|
| AO4410 | 30V N-Channel MOSFET |
| AO4412 | N-Channel FET |
| AO4413 | 30V P-Channel MOSFET |
| AO4413A | P-Channel FET |
| AO4414 | N-Channel FET |
| AO4414A | N-Channel FET |
| AO4415 | P-Channel FET |
| AO4418 | N-Channel FET |
| AO4419 | 30V P-Channel MOSFET |
| AO4400 | N-Channel MOSFET |