4616 Datasheet | Specifications & PDF Download

V-Data Synchronous DRAM VDS4616A4A 512K x 16 Bit x 2 Banks General Description The VDS4616A4A are two-bank Synchronous DRAMs organized as 524,288 wo

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N- and P-Channel 30 V (D-S) MOSFET DTM4616 www.din-tek.jp PRODUCT SUMMARY N-Channel P-Channel VDS (V) 30 - 30 RDS(on) (Ω) 0.024 at V GS = 10 V 0.

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HM  ' N And P-Channel Enhancement Mode MOSFET Description Schematic diagram The HM4616D uses advanced trench technology to provide excellent RDS

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A-Data Synchronous DRAM ADS4616A4A 512K x 16 Bit x 2 Banks General Description The ADS4616A4A are two-bank Synchronous DRAMs organized as 524,288 wo

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[AK4616] AK4616 24bit 3ch/5ch Audio CODEC with Mic Amplifier GENERAL DESCRIPTION The AK4616 is a single chip audio CODEC that includes three channel

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CD4614 thru CD4627 Zener Diode Chip Series Features Die • 0.5 W Capability with Proper Heat Sinking • Electrically Equivalent to 1N4614 - 1N4627

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Alfa-MOS Technology General Description AFC4616WS, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), l

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19-1501; Rev 0; 7/99 Low-Voltage, High-Speed, Quad, SPST CMOS Analog Switches General Description The MAX4614/MAX4615/MAX4616 quad, low-voltage, high

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AO4616 30V Complementary MOSFET General Description Product Summary The AO4616 uses advanced trench technology to provide excellent RDS(ON) and low

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www.DataSheet4U.com A48P4616 Preliminary Document Title 16M X 16 Bit DDR DRAM Revision History Rev. No. 0.0 16M X 16 Bit DDR DRAM History Initial i

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MCC TM Micro Commercial Components
     omponents 20736 Marilla Street Chatsworth  # $ % #

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KS88C4616/C4632/P4632 PRODUCT OVERVIEW 1 PRODUCT OVERVIEW SAM8 PRODUCT FAMILY Samsung's new SAM8 family of 8-bit single-chip CMOS microcontrollers

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www.DataSheet4U.com FEATURES ■ ■ ■ LTM4616 Dual 8A per Channel Low VIN DC/DC µModule DESCRIPTION The LTM®4616 is a complete dual 2-phase 8A per chan

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www.DataSheet4U.com A43L4616 4M X 16 Bit X 4 Banks Synchronous DRAM Document Title 4M X 16 Bit X 4 Banks Synchronous DRAM Revision History Rev. No. 0

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Document Title 16M X 16 Bit DDR DRAM Revision History Rev. No. History 1.0 Initial issue A48P4616B 16M X 16 Bit DDR DRAM Issue Date January 9, 2014

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Technical Data : AD-034 Page 1 of 2 PST R946**14AS - Fast Recovery Rectifier 1500 - 2400 VRRM; 1400 A avg ***************************************

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• 1N4614 THRU 1N4627 AVAILABLE IN JANHC AND JANKC PER MIL-PRF-19500/435 • ZENER DIODE CHIPS • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE

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Ordering number:EN3399C Features · Large current capacity (IC=2A). · High breakdown voltage (VCEO≥400V). 2SA1773 : PNP Eppitaxial Planar Silicon Tran

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd 4616 Product Summary N-Channel VDS= 30V ID= 8A (VGS=10V) RDS(ON) < 20mΩ (VGS=10V) < 28mΩ (VGS=4.5V

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1PMT4614e3 – 1PMT4627e3, 1PMT4099e3 – 1PMT4135e3 Compliant Powermite Low Noise 1 Watt Zener Diodes DESCRIPTION This Microsemi Powermite surface mo

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