4616 Datasheet | Specifications & PDF Download

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 4616 Product Summary N-Channel VDS= 30V ID= 8A (VGS=10V) RDS(ON) < 20mΩ (VGS=10V) < 28mΩ (VGS=4.5V

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HD404618 Series 4-Bit Single-Chip Microcomputer Rev. 6.0 Sept. 1998 Description The HD404618 Series is designed with the powerful and efficient archi

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CLL4614 THRU CLL4627 SURFACE MOUNT 500mW LOW NOISE SILICON ZENER DIODES 5% TOLERANCE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SE

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• 1N4614 THRU 1N4627 AVAILABLE IN JANHC AND JANKC PER MIL-PRF-19500/435 • ZENER DIODE CHIPS • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE

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Low Noise Zener Diode Series 1N4099UR-1 thru 1N4135UR-1 & 1N4614UR-1 thru 1N4627UR-1 Features • Available in JAN, JANTX, JANTXV and JANS per MIL-PRF

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1N4099-1 thru 1N4135-1 & 1N4614-1 thru 1N4627-1 Low Noise Zener Diode Series Features  Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/435

Rating: 1 ★ (3 votes)

WWW.Microsemi .COM SCOTTSDALE DIVISION 1N4099 thru 1N4135-1 and 1N4614 thru 1N4627-1 DO-35 500 mW GLASS AXIAL-LEAD LOW NOISE ZENER DIODES DESCRIPTI

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A-Data Synchronous DRAM ADS4616A4A 512K x 16 Bit x 2 Banks General Description The ADS4616A4A are two-bank Synchronous DRAMs organized as 524,288 wo

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+0  N and P-Channel Enhancement Mode Power MOSFET Description The +0  uses advanced trench technology to provide excellent RDS(ON) and low

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Low Noise Zener Diode Series 1N4099-1 thru 1N4135-1 and 1N4614-1 thru 1N4627-1 Features • Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500

Rating: 1 ★ (3 votes)

19-1501; Rev 0; 7/99 Low-Voltage, High-Speed, Quad, SPST CMOS Analog Switches General Description The MAX4614/MAX4615/MAX4616 quad, low-voltage, high

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WWW.Microsemi .COM SCOTTSDALE DIVISION IN4099UR-1 thru 1N4135UR-1 (or MLL4099-1 thru MLL4135-1) and 1N4614UR-1 thru 1N4627UR-1 (or MLL4614-1 thru ML

Rating: 1 ★ (3 votes)

HPC36164 46164 HPC36104 46104 High-Performance microController with A D January 1993 HPC36164 46164 HPC36104 46104 High-Performance microController

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AO4616 30V Complementary MOSFET General Description Product Summary The AO4616 uses advanced trench technology to provide excellent RDS(ON) and low

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in im el Pr ¡ Semiconductor MSM54V24616 ¡ Semiconductor 131,072-Word ¥ 16-Bit ¥ 2-bank SYNCHRONOUS DYNAMIC RAM MSM54V24616 y ar DESCRIPTION The MS

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www.DataSheet4U.com A48P4616 Preliminary Document Title 16M X 16 Bit DDR DRAM Revision History Rev. No. 0.0 16M X 16 Bit DDR DRAM History Initial i

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Ordering number:EN3399C Features · Large current capacity (IC=2A). · High breakdown voltage (VCEO≥400V). 2SA1773 : PNP Eppitaxial Planar Silicon Tran

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1N4614 THRU 1N4627 SILICON ZENER DIODE LOW NOISE 1.8 VOLT THRU 6.2 VOLT 250mW, 5% TOLERANCE DO-35 CASE w w w. c e n t r a l s e m i . c o m DESCRIPTI

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1N4614UR-1 – 1N4627UR-1e3, 1N4099UR-1 – 1N4135UR-1e3 Available on commercial versions 500 mW Metallurgically Bonded Glass Surface Mount Zener Diodes

Rating: 1 ★ (3 votes)

1N4099UR-1 thru 1N4135UR-1 & 1N4614UR-1 thru 1N4627UR-1 Low Noise Zener Diode Series Features  Available in JAN, JANTX, JANTXV and JANS per MIL-PRFUR

Rating: 1 ★ (3 votes)