4Gb Datasheet | Specifications & PDF Download

SAMSUNG CONFIDENTIAL Rev. 1.0, Dec. 2014 KLM4G1FEPD-B031 Samsung eMMC Product family eMMC 5.0 Specification compatibility datasheet SAMSUNG ELECTRONIC

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H27UCG8T2ATR-BC Series 64Gb(8192M x 8bit) Legacy MLC NAND Flash F20 64Gb MLC NAND Flash Memory TSOP Legacy This document is a general product descri

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THGBMBG5D1KBAIL 4GB THGBMBG5D1KBAIL TOSHIBA e-MMC Module INTRODUCTION THGBMBG5D1KBAIL is 4GB density of e-MMC Module product housed in 153ball BGA

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CI-MCP Specification 4GB eNAND (x8) + 4Gb LPDDR2-S4B (x32) This document is a general product description and is subject to change without notice. SK

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200ball FBGA Specification 4GB LPDDR4/LPDDR4X This document is a general product description and is subject to change without notice. SK hynix does no

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SAMSUNG CONFIDENTIAL Rev. 1.2, Jul. 2016 K9F4G08U0F K9K8G08U0F K9WAG08U1F 4Gb F-die NAND Flash Single-Level-Cell (1bit/cell) datasheet SAMSUNG ELECTRO

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Sep. 2020 SCB13H4Gxx0AF 4Gbit DDR3L SDRAM EU RoHS Compliant Products Data Sheet Rev. G Data Sheet SCB13H4Gxx0AF 4-Gbit DDR3L SDRAM Revision History

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PRELIMINARY DATA SHEET www.DataSheet4U.com 4GB Fully Buffered DIMM EBE41FE4ABHT EBE41FE4ABHL Specifications • Density: 4GB • Organization  512M wor

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PART OBSOLETE - Bulletin EOL18 I2716 rev. F 06/03 4GBL Series 4.0 Amps Single Phase Full Wave Bridge Rectifier Features Diode chips are glass passi

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SAMSUNG CONFIDENTIAL Rev.1.2, Jun. 2013 K9F4G08U0E K9K8G08U0E K9K8G08U1E K9WAG08U1E 4Gb E-die NAND Flash Single-Level-Cell (1bit/cell) datasheet SA

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THGBM4G5D1HBAIR TOSHIBA e-MMC Module 4GB THGBM4G5D1HBAIR INTRODUCTION THGBM4G5D1HBAIR is 4-GByte density of e-MMC Module product housed in 153 ball BG

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Rev. 1.6, Jan. 2017 K4A4G045WE K4A4G085WE 4Gb E-die DDR4 SDRAM 78FBGA with Lead-Free & Halogen-Free (RoHS compliant) 1.2V datasheet SAMSUNG ELECT

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4Gb DDR3 SDRAM B-Die NT5CB1024M4BN / NT5CB512M8BN / NT5CB256M16BP NT5CC1024M4BN / NT5CC512M8BN / NT5CC256M16BP Feature  VDD = VDDQ = 1.5V ± 0.075V (

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PART OBSOLETE - EOL18 Bulletin I2717 rev. G 05/02 4GBU Series 4.0 Amps Single Phase Full Wave Features Diode chips are glass passivated Suitable for

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DATA SHEET www.DataSheet4U.com 4GB Fully Buffered DIMM EBE41FE4ACFT Specifications • Density: 4GB • Organization  512M words × 72 bits, 2 ranks • M

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Elektronische Bauelemente 4GBJ6005 ~ 4GBJ610 Voltage 50V ~ 1000V 6.0 Amp Glass Passivited Bridge Rectifiers RoHS Compliant Product A suffix of “-C”

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IS43/46TR16256EC, IS43/46TR16256ECL, IS43/46TR85120EC, IS43/46TR85120ECL 512Mx8, 256Mx16 4Gb DDR3 SDRAM with On-Chip ECC FEATURES • Standard Voltage

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Datasheet RZ/T2M Group RZ Arm-based High-end 32 & 64-bit MPUs R01DS0383EJ0120 Rev.1.20 Oct 31, 2023 200/400/800 MHz, Dual/Single Arm® Cortex®-R52 o

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4GBJ8005 thru 4GBJ810 GLASS PASSIVATED BRIDGE RECTIFIERS FEATURES ●Rating to 1000V PRV ● Ideal for printed circuit board ●Low forward voltage drop,hig

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