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64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O Document Title 4Bank x 1M x 16bits Synchronous DRAM Revision History Revision No. 0.1 History Initi

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K4S640432D CMOS SDRAM 64Mbit SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 June 1999 * Samsung Electronics reserves the right to c

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www.DataSheet4U.com M28W320FST, M28W320FSB, M28W640FSB, M28W640FST 32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Boot Block, Secure Flash Memories

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www.DataSheet4U.com M28W320FST, M28W320FSB, M28W640FSB, M28W640FST 32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Boot Block, Secure Flash Memories

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K4S640832F CMOS SDRAM 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 1.1 May. 2003 * Samsung Electronics reserves the right to c

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www.DataSheet4U.com Preliminary FM22L16 4Mbit FRAM Memory Features 4Mbit Ferroelectric Nonvolatile RAM • Organized as 256Kx16 • Configurable as 512Kx

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www.DataSheet4U.com M28W320FST, M28W320FSB, M28W640FSB, M28W640FST 32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Boot Block, Secure Flash Memories

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LH28Fxxx FLASH MEMORY FLASH NON-VOLATILE MEMORY FLASH E2ROM FLASH ROM READ ONLY MEMORY ETOX LH28F400SUN-LC12 4M (512Kx8/256Kx16) SINGLE VOLTAGE

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K4S640832D CMOS SDRAM 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 June 1999 * Samsung Electronics reserves the right to c

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K4S640832E CMOS SDRAM 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 * Samsung Electronics reserves the right to

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K4D623238B-GC 64M DDR SDRAM 64Mbit DDR SDRAM 512K x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL (144-Ba

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w w w . D a t a S h e e t 4 U . c o m V54C365(16/80/40)4VE 64Mbit SDRAM 3.3 VOLT, TSOP II / FBGA 4M X 16, 8M X 8, 16M X 4 6 System Frequency (fCK) C

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PRODUCT SPECIFICATION www.DataSheet4U.com Integrated Circuits Group LH28F640BFHE-PBTL70A Flash Memory 64Mbit (4Mbitx16) (Model Number: LHF64FG8 Spec

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LH28Fxxx FLASH MEMORY FLASH NON-VOLATILE MEMORY FLASH E2ROM FLASH ROM READ ONLY MEMORY ETOX LH28F400SUHT-NC80 4M (512Kx8/256Kx16) 5V SINGLE VOLTAGE

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SST25WF040B 4 Mbit 1.8V SPI Serial Flash Features • Single Voltage Read and Write Operations - 1.65-1.95V • Serial Interface Architecture - SPI Compa

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KM416RD8AC(D)/KM418RD8AC(D) Direct RDRAM™ 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Revision 1.01 October 1999 Page

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K4S641632F CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 * Samsung Electronics reserves the right to

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PMC FEATURES Pm39LV512 / Pm39LV010 / Pm39LV020 / Pm39LV040 512 Kbit / 1Mbit / 2Mbit / 4Mbit 3.0 Volt-only CMOS Flash Memory • Single Power Supply Op

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www.DataSheet4U.com LHF64P01 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction, fu

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w w w . D a t a S h e e t 4 U . c o m V54C365(16/80/40)4VE 64Mbit SDRAM 3.3 VOLT, TSOP II / FBGA 4M X 16, 8M X 8, 16M X 4 6 System Frequency (fCK) C

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