.
PMC-Sierra
17
PM39LV010 - (PM39LV010 - PM39LV512) 512 Kbit / 1Mbit / 2Mbit / 4Mbit 3.0 Volt-only CMOS Flash Memory
PMC FEATURES Pm39LV512 / Pm39LV010 / Pm39LV020 / Pm39LV040 512 Kbit / 1Mbit / 2Mbit / 4Mbit 3.0 Volt-only CMOS Flash Memory • Single Power Supply Op.
Sharp Microelectronics
9
LH28F640BFHE-PBTL70A - Flash Memory 64Mbit (4Mbitx16)
PRODUCT SPECIFICATION www.DataSheet4U.com Integrated Circuits Group LH28F640BFHE-PBTL70A Flash Memory 64Mbit (4Mbitx16) (Model Number: LHF64FG8 Spec.
Elite Semiconductor
7
F25L004A - 4Mbit (512Kx8) 3V Only Serial Flash Memory
www.DataSheet4U.com ESMT F25L004A 4Mbit (512Kx8) 3V Only Serial Flash Memory FEATURES Single supply voltage 2.7~3.6V Speed - Read max frequency .
Hynix
7
HY57V641620FTP - Synchronous DRAM Memory 64Mbit
64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O Document Title 4Bank x 1M x 16bits Synchronous DRAM Revision History Revision No. 0.1 History Initi.
Mosel Vitelic Corp
6
V58C265404S - HIGH PERFORMANCE 2.5 VOLT 16M X 4 DDR SDRAM 4 BANKS X 4Mbit X 4
MOSEL VITELIC V58C265404S HIGH PERFORMANCE 2.5 VOLT 16M X 4 DDR SDRAM 4 BANKS X 4Mbit X 4 PRELIMINARY 6 System Frequency (fCK) Clock Cycle Time (tC.
Excel Semiconductor
6
ES25P40 - 4Mbit CMOS 3.0 Volt Flash Memory
E ES S II ADVANCED INFORMATION Excel Semiconductor inc. ES25P40 4Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Interface www.DataSheet4U.com A.
Samsung semiconductor
5
K4S640832E-TC75 - 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
K4S640832E CMOS SDRAM 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 * Samsung Electronics reserves the right to .
Samsung semiconductor
5
K4S640832E-TL1L - 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
K4S640832E CMOS SDRAM 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 * Samsung Electronics reserves the right to .
Samsung semiconductor
5
K4S641632D - 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S641632D CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.3 June 2000 * Samsung Electronics reserves the right to .
Samsung semiconductor
5
K4S641632F - 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S641632F CMOS SDRAM 64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 * Samsung Electronics reserves the right to.
Toshiba
5
TC58FVM6B2AFT65 - 64MBIT (8M x 8 BITS/4M x 16 BITS) CMOS FLASH MEMORY
TC58FVM6(T/B)2A(FT/XB)65 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64MBIT (8M × 8 BITS/4M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The.
ProMOS Technologies
5
V54C3256404VE - (V54C3xxxx4VE) 64Mbit SDRAM
w w w . D a t a S h e e t 4 U . c o m V54C365(16/80/40)4VE 64Mbit SDRAM 3.3 VOLT, TSOP II / FBGA 4M X 16, 8M X 8, 16M X 4 6 System Frequency (fCK) C.
Aeroflex Circuit Technology
5
UT8QNF8M8 - 64Mbit NOR Flash Memory
Standard Products UT8QNF8M8 64Mbit NOR Flash Memory Datasheet September 9, 2013 www.aeroflex.com/Norflash FEATURES 64Mbits organized as either 8M x.
Microchip
4
SST25PF040C - 4Mbit 3.3V SPI Serial Flash
SST25PF040C 4 Mbit, 3.3V, SPI Serial Flash Features • Single Voltage Read and Write Operations - 2.3-3.6V • Serial Interface Architecture - SPI Compa.
ATMEL Corporation
4
AT25F4096 - 4Mbit High Speed SPI Serial Flash Memory
Features • Serial Peripheral Interface (SPI) Compatible • Supports SPI Modes 0 (0,0) and 3 (1,1) – Datasheet describes Mode 0 Operation • 33 MHz Clock.
Samsung semiconductor
4
K4S640432D - 64Mbit SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM LVTTL
K4S640432D CMOS SDRAM 64Mbit SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 June 1999 * Samsung Electronics reserves the right to c.
Samsung semiconductor
4
K4S640832D - 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
K4S640832D CMOS SDRAM 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 June 1999 * Samsung Electronics reserves the right to c.
Samsung semiconductor
4
K4S640832E-TC1L - 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
K4S640832E CMOS SDRAM 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 * Samsung Electronics reserves the right to .
Samsung semiconductor
4
K4S640832E-TL1H - 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
K4S640832E CMOS SDRAM 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 * Samsung Electronics reserves the right to .
Samsung semiconductor
4
K4S640832F-TL75 - 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
K4S640832F CMOS SDRAM 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 1.1 May. 2003 * Samsung Electronics reserves the right to c.