5.8G Datasheet | Specifications & PDF Download

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NEC's GENERAL PURPOSE UPC3217GV 5 V AGC AMPLIFIER UPC3218GV FEATURES • ON-CHIP LOW DISTORTION AMPLIFIER: IIP3 = -4 dBm at minimuim gain • WIDE AGC DYN

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HER801G - HER808G 8.0 AMPS. Glass Passivated High Efficient Rectifiers R-6 Features Glass passivated chip junction. High efficiency, Low VF High curr

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RTC6705 RTC6705-DST-001 Data Sheet SEP 2007 RTC6705 CMOS 5.8GHz Band FM Transmitter Product Description The RTC6705 is a wide-band FM transmitter int

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GBU8A, GBU8B, GBU8D, GBU8G, GBU8J, GBU8K, GBU8M www.vishay.com Vishay General Semiconductor Glass Passivated Single-Phase Bridge Rectifier + ~ ~ -

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178ball FBGA Specification 8Gb LPDDR3 (x32) 16Gb LPDDR3 (x32) V1.0 1 Document Title FBGA 8Gb (x32, 1CS) LPDDR3 16Gb (x32, 2CS) LPDDR3 Revision Hist

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 80V D RDSON (MAX.) 85mΩ ID 5A G UIS, Rg 100% Tested S

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C/A-2308X ALPHA-NUMERIC DISPLAY Shape Part No. Common Common Cathode Anode Chip Raw Material Emitted Color Wave Length λp(nm) Electro-Optical Characte

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www.DataSheet4U.com APD-128G032 Vishay Dale Plasma Display Modules 128 x 32 Graphics Display with Drive Electronics and TTL Level Data Interface FEA

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Micron Confidential and Proprietary 8Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F8G08ABABA, MT29F8G08ABCBB Features • Open NAN

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Diode Silicon Carbide Schottky Diode IDM08G120C5 5th Generation thinQ ™ 1200 V SiC Schottky Diode Final Datasheet Rev. 2.0 2015-07-22 Industrial Power

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APD-128G064 Vishay Dale Plasma Display Modules 128 x 64 Graphics Display with Drive Electronics and TTL Level Data Interface FEATURES • TTL level vi

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SEMICONDUCTOR 4PT Series RRooHHSS Sensitive gate SCRs, 4A Main Features Symbol IT(RMS) VDRM/VRRM IGT Value 4 600 to 800 10 to 200 Unit A V µA A

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BLF8G27LS-100P Power LDMOS transistor Rev. 5 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power tra

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PLLs - SMT v02.0813 Typical Applications The HMC703LP4E is ideal for: • Microwave Point-to-Point Radios • Base Stations for Mobile Radio (GSM,

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SAMSUNG CONFIDENTIAL Rev. 1.21 Jul. 2017 KLM8G1GETF-B041 KLMAG1JETD-B041 KLMBG2JETD-B041 KLMCG4JETD-B041 Samsung eMMC Product family eMMC 5.1 Specific

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Data Sheet November 2001 L9218A/G Low-Cost Line Interface Features s Basic forward battery only SLIC functionality at a low cost s Pin compatible wi

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Datasheet RL78/G12 RENESAS MCU R01DS0193EJ0230 Rev.2.30 Jun 19, 2020 True low-power platform (63 μA/MHz) for the general-purpose applications, with

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GaAs-Infrarot-Lumineszenzdiode (950 nm, Enhanced Power) GaAs Infrared Emitting Diode (950 nm, Enhanced Power) F 0118G Vorläufige Daten / Preliminary

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