Directed Energy, Inc. An DE150-501N04A RF Power M.
IXYS
DE150-501N04A - RF Power MOSFET
DE150-501N04A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching VDSS ID25 = 500 V = 4.5 A Symbol VDSS VDGR .
Directed Energy
501N04A - RF Power MOSFET
Directed Energy, Inc. An DE150-501N04A RF Power MOSFET Preliminary Data Sheet IXYS Company N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg.