* Isolated Substrate
* high isolation voltage (>2500V)
* excellent thermal transfer
* Increased temperature and power cycling capability
* IXYS advanced low Qg process
* Low gate charge and capacitances
* easier to drive
* faster switch
DE150-501N04A Datasheet (142.67 KB)
DE150-501N04A
IXYS
142.67 KB
Rf power mosfet.
DE150-501N04A RF Power MOSFET
N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching
VDSS ID25
= 500 V = 4.5 A
Symbol VDSS VDGR .
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