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DE150-102N02A RF Power MOSFET

DE150-102N02A Description

DE150-102N02A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching VDSS ID25 = 1000 V = 2A Symbol Test Condi.

DE150-102N02A Features

* Isolated Substrate
* high isolation voltage (>2500V)
* excellent thermal transfer
* Increased temperature and power cycling capability
* IXYS advanced low Qg process
* Low gate charge and capacitances
* easier to drive
* faster switch

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Datasheet Details

Part number
DE150-102N02A
Manufacturer
IXYS
File Size
162.64 KB
Datasheet
DE150-102N02A-IXYS.pdf
Description
RF Power MOSFET

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Power MOSFET IXYS
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