DE150-102N02A RF Power MOSFET

IXYS

Description

DE150-102N02A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching VDSS ID25 = 1000 V = 2A Symbol Test Condi.

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Datasheet Specifications

Part number: DE150-102N02A
Manufacturer: IXYS
File Size: 162.64 KB
Datasheet: DE150-102N02A-IXYS.pdf
Description: RF Power MOSFET

Features

* Isolated Substrate
* high isolation voltage (>2500V)
* excellent thermal transfer
* Increased temperature and power cycling capability
* IXYS advanced low Qg process
* Low gate charge and capacitances
* easier to drive
* faster switch

DE150-102N02A Distributors

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DE150-102N02A Power MOSFET IXYS

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