DE150-102N02A Datasheet (IXYS)

DE150-102N02A, RF Power MOSFET

DE150-102N02A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching VDSS ID25 = 1000 V = 2A Symbol Test Conditions Maximum Ratings RDS(on) = 7.8 Ω VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω IS = 0 1000 V 1000 V ±20 V ±30 V 2A 12 A 1.5 A 6 mJ 3 V/ns >200

DE150-102N02A Features

* Isolated Substrate

* high isolation voltage (>2500V)

* excellent thermal transfer

* Increased temperature and power cycling capability

* IXYS advanced low Qg process

* Low gate charge and capacitances

* easier to drive

* faster switch