DE150-201N09A Datasheet (IXYS)

DE150-201N09A, RF Power MOSFET

DE150-201N09A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Maximum Ratings 200 V 200 V VDSS = ID25 = RDS(on) ≤ PDC = 200 V 9A 0.3 Ω 75 W VGS VGSM Continuous Transient ±20 V ±30 V ID25 Tc = 25°C IDM Tc = 25°C, pulse width limited by TJM 9 A 54 A IAR Tc = 25°C 9.0 A EAR Tc = 25°C 7.5 mJ dv/dt PD

DE150-201N09A Features

* Isolated Substrate

* high isolation voltage (>2500V)

* excellent thermal transfer

* Increased temperature and power cycling capability

* IXYS advanced low Qg process

* Low gate charge and capacitances

* easier to drive

* faster switch