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DE150-201N09A RF Power MOSFET

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Description

DE150-201N09A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Symbo.

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Datasheet Specifications

Part number
DE150-201N09A
Manufacturer
IXYS
File Size
179.54 KB
Datasheet
DE150-201N09A-IXYS.pdf
Description
RF Power MOSFET

Features

* Isolated Substrate
* high isolation voltage (>2500V)
* excellent thermal transfer
* Increased temperature and power cycling capability
* IXYS advanced low Qg process
* Low gate charge and capacitances
* easier to drive
* faster switch

Applications

* Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Maximum Ratings 200 V 200 V VDSS = ID25 = RDS(on) ≤ PDC = 200 V 9A 0.3 Ω 75 W VGS VGSM Continuous Transient ±20 V ±30 V ID25 Tc = 25°C IDM Tc = 25°C, pulse width limited by TJM 9 A 54 A

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