* Isolated Substrate
* high isolation voltage (>2500V)
* excellent thermal transfer
* Increased temperature and power cycling capability
* IXYS advanced low Qg process
* Low gate charge and capacitances
* easier to drive
* faster switch
DE150-201N09A Datasheet (179.54 KB)
DE150-201N09A
IXYS
179.54 KB
Rf power mosfet.
DE150-201N09A
RF Power MOSFET
N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications
Symbo.
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