Datasheet4U Logo Datasheet4U.com

DE150-201N09A RF Power MOSFET

DE150-201N09A Description

DE150-201N09A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Symbo.

DE150-201N09A Features

* Isolated Substrate
* high isolation voltage (>2500V)
* excellent thermal transfer
* Increased temperature and power cycling capability
* IXYS advanced low Qg process
* Low gate charge and capacitances
* easier to drive
* faster switch

DE150-201N09A Applications

* Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Maximum Ratings 200 V 200 V VDSS = ID25 = RDS(on) ≤ PDC = 200 V 9A 0.3 Ω 75 W VGS VGSM Continuous Transient ±20 V ±30 V ID25 Tc = 25°C IDM Tc = 25°C, pulse width limited by TJM 9 A 54 A

📥 Download Datasheet

Preview of DE150-201N09A PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
DE150-201N09A
Manufacturer
IXYS
File Size
179.54 KB
Datasheet
DE150-201N09A-IXYS.pdf
Description
RF Power MOSFET

📁 Related Datasheet

  • DE104 - (DE104 - DE115) Signal Diode / Ultra Low Leakage (Unitrode)
  • DE10P3 - Schottky Rectifiers (Shindengen Electric Mfg.Co.Ltd)
  • DE10PC3 - Schottky Rectifiers (SBD) (30V 10A) (Shindengen Electric Mfg.Co.Ltd)
  • DE10S3L - Schottky Barrier Diodes (Shindengen)
  • DE10SC3L - Schottky Barrier Diodes (Shindengen)
  • DE10SC4 - Schottky Barrier Diodes (Shindengen)
  • DE110 - (DE104 - DE115) Signal Diode / Ultra Low Leakage (Unitrode)
  • DE111 - (DE104 - DE115) Signal Diode / Ultra Low Leakage (Unitrode)

📌 All Tags

Power MOSFET IXYS
IXYS DE150-201N09A-like datasheet