DE150-101N09A Datasheet (IXYS)

DE150-101N09A, RF Power MOSFET

DE150-101N09A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Symbol VDSS VDGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Maximum Ratings 100 V 100 V VDSS = 100 V ID25 = 9.0 A RDS(on) ≤ 0.16 Ω PDC = 200 W VGS VGSM Continuous Transient ±20 V ±30 V ID25 Tc = 25°C IDM Tc = 25°C, pulse width limited by TJM 9.0 A 54 A IAR Tc = 25°C 14 A EAR Tc = 25°C 7.5 mJ dv/dt

DE150-101N09A Features

* Isolated Substrate

* high isolation voltage (>2500V)

* excellent thermal transfer

* Increased temperature and power cycling capability

* IXYS advanced low Qg process

* Low gate charge and capacitances

* easier to drive

* faster switch