Datasheet Specifications
- Part number
- DE150-101N09A
- Manufacturer
- IXYS
- File Size
- 144.59 KB
- Datasheet
- DE150-101N09A-IXYS.pdf
- Description
- RF Power MOSFET
Description
DE150-101N09A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Symbo.
Features
* Isolated SubstrateApplications
* Symbol VDSS VDGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Maximum Ratings 100 V 100 V VDSS = 100 V ID25 = 9.0 A RDS(on) ≤ 0.16 Ω PDC = 200 W VGS VGSM Continuous Transient ±20 V ±30 V ID25 Tc = 25°C IDM Tc = 25°C, pulse width limited by TJM 9.0 A 54DE150-101N09A Distributors
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