508 Datasheet | Specifications & PDF Download

MMBT5087L Low Noise Transistor PNP Silicon Features • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requir

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CS8508E EMI，AB/D，8W CS8508E ， EMI，ABD 8 . 0 W 。 7 . 4 V ,CS8508E 4Ω 6.8W 。 C S 8 5 0 8 ED ， P W M

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TC1508A 、TC1508A  MOS  、、   （1.6Ω）  1.8A/, 2.5A   SOP-16 、TC1508A  、TC1508A ek NC 1 16 OUTA T INA 2 15 PGND INB 3 14

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JA5088SL One Cell Lithium-ion/Polymer Battery Protection IC GENERAL DESCRIPTION JA5088SL is a spacing saving single chip lithium-ion/polymer battery

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www.DataSheet4U.com Features • 2nd Generation EE Complex Programmable Logic Devices – 3.0V to 3.6V Operating Range with 5V Tolerant I/Os – 32 - 512 M

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BU208A ® BU508A/BU508AFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS s STMicroelectronics PREFERRED SALESTYPES s HIGH VOLTAGE CAPABILITY (> 150

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TPP60508 60-V, 5-A, Non-Synchronous Step-Down DC/DC Converter Features • High Efficiency at Light Loads with Pulse Skipping • 80-mΩ High-Side MOSFET

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DIO5508 1A Lithium Ion Battery Charger IC Rev 1.2 Features  Programmable Charge Current Up to 1A  Over Voltage Lockout Protection  Under Voltage

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2N5086/2N5087/MMBT5087 2N5086/2N5087/MMBT5087 PNP General Purpose Amplifier • This device is designed for low level, high gain, low noise general pur

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SM4508NHKP ® N-Channel Enhancement Mode MOSFET Features Pin Description · 30V/48A, RDS(ON)=6.8mW (Max.) @ VGS=10V RDS(ON)=11mW (Max.) @ VGS=4.5V ·

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Embedded Power for Business-Critical Continuity NTS500 Series 500 Watts Total Power: Input Voltage: # of Outputs: 200 - 500 Watts 85 - 264 Vac

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PIC12C5XX 8-Pin, 8-Bit CMOS Microcontroller Devices included in this Data Sheet: PIC12C508 and PIC12C509 are 8-bit microcontrollers packaged in 8-lead

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU508 www.datasheet4u.com DESCRIPTION ·With TO-3PN package ·High volta

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