512M Datasheet | Specifications & PDF Download

128Mx64 bits Unbuffered DDR SO-DIMM HYMD512M646B(L)FS8-J/M/K/H/L Document Title 128Mx64 bits Unbuffered DDR SO-DIMM Revision History No. 0.1 History I

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ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7V ~ 1.95V)  Organization x8: - Memory Cell Array: (512M + 8M) x 8bit - Data Register: (2K + 64) x 8bit

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ESMT Flash FEATURES  Organization – Memory cell array 4352 × 128K × 8 – Register 4352 × 8 – Page size 4352 bytes – Block size (256K + 16K) bytes  Mo

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H5PS5162GFR Series 512Mb DDR2 SDRAM H5PS5182GFR-xxC H5PS5182GFR-xxI H5PS5182GFR-xxL H5PS5182GFR-xxJ H5PS5162GFR-xxC H5PS5162GFR-xxI H5PS5162GFR-xxL H

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Revision History Revision 0.1 (May. 2010) - First release. Revision 0.2 (Sep. 2010) - Delete CL=2 parameters - Input Leakage Current = -2μA ~ +2μA - C

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W25Q512JV 3V 512M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI Publication Release Date: June 25, 2019 -Revision B W25Q512JV Table of Contents 1. GENER

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HY5RS123235BFP 512Mbit (16Mx32) GDDR3 SDRAM HY5RS123235BFP This document is a general product description and is subject to change without notice. Hy

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512Mb DDR2 SDRAM 512Mb DDR2 SDRAM Lead-Free&Halogen-Free (RoHS Compliant) H5PS5182KFR-xxC H5PS5162KFR-xxC H5PS5182KFR-xxI H5PS5162KFR-xxI H5PS5182KFR

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For the availability of this product, please contact the sales office.

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K9W8G08U1M K9K4G08Q0M K9K4G08U0M K9K4G16Q0M K9K4G16U0M FLASH MEMORY Document Title 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory Revision History

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MTV512M Preliminary 8051 Embedded Monitor Controller 64K Flash Type GENERAL DESCRIPTIONS The MTV512M micro-controller is an 8051 CPU core embedded de

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DATA SHEET 512MB DDR SDRAM SO-DIMM EBD52UD6ADSA-E (64M words × 64 bits, 2 Ranks) Description The EBD52UD6ADSA is 64M words × 64 bits, 2 ranks Double

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www.DataSheet4U.com D a t a S h e e t , Rev. 1.10, O c t . 2 0 0 5 HYB25DC512800C[E/F] HYB25DC512160C[E/F] 512-Mbit Double-Data-Rate SDRAM DDR SDRAM

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IS42S86400B IS42S16320B, IS45S16320B www.DataSheet4U.com 64M x 8, 32M x 16 SEPTEMBER 2009 512Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166,

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A3R12E30CBF A3R12E40CBF 512Mb DDRII Synchronous DRAM 512Mb DDRII SDRAM Specification A3R12E30CBF A3R12E40CBF Zentel Electronics Corp. Revision 1.2

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ESMT Flash FEATURES  Organization – Memory cell array 4352 × 128K × 8 – Register 4352 × 8 – Page size 4352 bytes – Block size (256K + 16K) bytes  Mo

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EEPROM Serial 512-Kb I2C - Automotive Grade 1 in Wettable Flank UDFN Package NV24C512MUW Description The NV24C512MUW is a EEPROM Serial 512−Kb I2C, i

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W25Q512NW 1.8V 512M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI Publication Release Date: December 7, 2020 Preliminary -Revision A6 W25Q512NW Table of

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512Mb DDR2 SDRAM 512Mb DDR2 SDRAM Lead-Free&Halogen-Free (RoHS Compliant) H5PS5182KFR-xxC H5PS5162KFR-xxC H5PS5182KFR-xxI H5PS5162KFR-xxI H5PS5182KFR

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