25Q512JVFQ (Winbond)
3V 512M-BIT SERIAL FLASH MEMORY
W25Q512JV
3V 512M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI
Publication Release Date: June 25, 2019 -Revision B
W25Q512JV
Table of Contents
1. GENER
(10 views)
S28HS512T (Infineon)
S512Mb Flash
S28HS512T, S28HS01GT, S28HL512T, S28HL01GT
512Mb/1Gb SEMPER™ Flash
S
Octal interface, 1.8V/3.0V
Features
• Infineon 45-nm MIRRORBIT™ technology that s
(8 views)
K9K4G16U0M (Samsung)
512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
K9W8G08U1M K9K4G08Q0M K9K4G08U0M
K9K4G16Q0M K9K4G16U0M
FLASH MEMORY
Document Title
512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
Revision History
(6 views)
M2S12D20TP-10L (Mitsubishi)
512M Double Data Rate Synchronous DRAM
DDR SDRAM (Rev.1.1) Feb.ELECTRIC '02
MITSUBISHI
MITSUBISHI LSIs
M2S12D20/ 30TP -75, -75L, -10, -10L
512M Double Data Rate Synchronous DRAM
DESCRIPT
(6 views)
S25FL512S (SPANSION)
512Mbit (64Mbyte) MirrorBit Flash Non-Volatile Memory
S25FL512S
512 Mbit (64 Mbyte) MirrorBit® Flash Non-Volatile Memory CMOS 3.0 Volt Core with Versatile I/O Serial Peripheral Interface with Multi-I/O
Da
(6 views)
W25M512JV (Winbond)
3V 512M-BIT SERIAL MCP FLASH MEMORY
W25M512JV
Featuring
3V 512M-BIT (2 x 256M-BIT) SERIAL MCP FLASH MEMORY
With Multi I/O SPI & Concurrent Operations
Publication Release Date: September
(6 views)
S25FL512S (Infineon)
512Mb (64MB) FL-S Flash
S25FL512S
512 Mb (64 MB) FL-S Flash
SPI Multi-I/O, 3.0 V
Features
• CMOS 3.0 V Core with versatile I/O
• SPI with Multi-I/O
• Density - 512 Mb (64 MB)
(6 views)
W25N512GVBIT (Winbond)
3V 512M-BIT SERIAL SLC NAND FLASH MEMORY
W25N512GVxIG/IT
3V 512M-BIT SERIAL SLC NAND FLASH MEMORY WITH DUAL/QUAD SPI BUFFER READ & CONTINUOUS READ
Publication Release Date: November 21, 2018
(6 views)
K4T51163QI (Samsung)
512Mb I-die DDR2 SDRAM
Rev. 1.0, Mar. 2010 K4T51043QI K4T51083QI K4T51163QI
512Mb I-die DDR2 SDRAM
60 & 84FBGA with Lead-Free & Halogen-Free (RoHS compliant)
datasheet SAMSU
(5 views)
IS42R16320F (ISSI)
512Mb SDRAM
IS42R86400F/16320F, IS45R86400F/16320F IS42S86400F/16320F, IS45S86400F/16320F
32Mx16, 64Mx8 512Mb SDRAM
FEATURES
• Clock frequency: 200, 166, 143 MHz
(5 views)
K9W8G08U1M (Samsung)
512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
K9W8G08U1M K9K4G08Q0M K9K4G08U0M
K9K4G16Q0M K9K4G16U0M
FLASH MEMORY
Document Title
512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
Revision History
(5 views)
M2S12D20TP (Mitsubishi)
512M Double Data Rate Synchronous DRAM
DDR SDRAM (Rev.1.1) Feb.ELECTRIC '02
MITSUBISHI
MITSUBISHI LSIs
M2S12D20/ 30TP -75, -75L, -10, -10L
512M Double Data Rate Synchronous DRAM
DESCRIPT
(5 views)
M368L3324BUM (Samsung semiconductor)
(M368LxxxxBxM) DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die
www.DataSheet4U.com
256MB, 512MB, 1GB Unbuffered DIMM
DDR SDRAM
DDR SDRAM Unbuffered Module
184pin Unbuffered Module based on 512Mb B-die with 64/7
(5 views)
K4T51163QN (Samsung)
512Mb N-die DDR2 SDRAM
Rev. 1.0, Jun. 2016 K4T51083QN K4T51163QN
512Mb N-die DDR2 SDRAM
60 & 84FBGA with Lead-Free & Halogen-Free (RoHS compliant)
datasheet SAMSUNG ELECTRON
(5 views)
H5PS5162GFR (Hynix)
512Mb DDR2 SDRAM
H5PS5162GFR Series
512Mb DDR2 SDRAM
H5PS5182GFR-xxC H5PS5182GFR-xxI H5PS5182GFR-xxL H5PS5182GFR-xxJ H5PS5162GFR-xxC H5PS5162GFR-xxI H5PS5162GFR-xxL H
(5 views)
K4M51163PI (Samsung semiconductor)
512Mb I-die Mobile SDR SDRAM
Rev. 1.0, Dec. 2009 K4M51163PI
512Mb I-die Mobile SDR SDRAM
32Mb x16, 54FBGA with Lead-Free & Halogen-Free (VDD / VDDQ = 1.8V / 1.8V)
datasheet
SAMS
(5 views)
W989D6DB (Winbond)
512Mb Mobile LPSDR
W989D6DB / W989D2DB
512Mb Mobile LPSDR
Table of Contents-
1. GENERAL DESCRIPTION
(5 views)
W25Q512JV (Winbond)
3V 512M-BIT SERIAL FLASH MEMORY
W25Q512JV
3V 512M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI
Publication Release Date: June 25, 2019 -Revision B
W25Q512JV
Table of Contents
1. GENER
(5 views)
T2512MH (STMicroelectronics)
Standard Triacs
(5 views)
S29GL512S (Infineon)
512Mb Flash Memory
S29GL01GS, S29GL512S, S29GL256S, S29GL128S
128 Mb/256 Mb/512 Mb/1 Gb GL-S MIRRORBIT™ flash
Parallel, 3.0 V
General description
The S29GL01G/512/256/12
(5 views)