K9W8G08U1M Datasheet, Memory, Samsung

K9W8G08U1M Features

• Memory
• Voltage Supply -1.8V device(K9K4GXXQ0M): 1.70V~1.95V -3.3V device(K9XXGXXUXM): 2.7 V ~3.6 V
• Organization - Memory Cell Array -X8 device(K9XXG08XXM) : (512M + 16,384K

PDF File Details

Part number:

K9W8G08U1M

Manufacturer:

Samsung

File Size:

601.67kb

Download:

📄 Datasheet

Description:

512m x 8 bit / 256m x 16 bit nand flash memory. Offered in 512Mx8bit or 256Mx16bit, the K9XXGXXXXM is 4G bit with spare 128M bit capacity. Its NAND cell provides the most cost-effec

K9W8G08U1M Application

• Applications such as solid state file storage and other portable applications requiring non-volatility. An ultra high density solution having two 4G

TAGS

K9W8G08U1M

Samsung

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