K9W8G08U1M Datasheet - Samsung

512M x 8 Bit / 256M x 16 Bit NAND Flash Memory

K9W8G08U1M Features

* Voltage Supply -1.8V device(K9K4GXXQ0M): 1.70V~1.95V -3.3V device(K9XXGXXUXM): 2.7 V ~3.6 V

* Organization - Memory Cell Array -X8 device(K9XXG08XXM) : (512M + 16,384K)bit x 8bit -X16 device(K9XXG16XXM) : (256M + 8,192K)bit x 16bit - Data Register -X8 device(K9XXG08XXM): (2K + 64)b

K9W8G08U1M General Description

Offered in 512Mx8bit or 256Mx16bit, the K9XXGXXXXM is 4G bit with spare 128M bit capacity. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be performed in typical 300µs on the 2112byte(X8 device) or 1056-word(X16 device) page a.

K9W8G08U1M Datasheet (601.67 KB)

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K9W8G08U1M

Manufacturer:

Samsung

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601.67 KB

Description:

512m x 8 bit / 256m x 16 bit nand flash memory.
K9W8G08U1M K9K4G08Q0M K9K4G08U0M K9K4G16Q0M K9K4G16U0M FLASH MEMORY Document Title 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory Revision History.

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K9W8G08U1M 512M Bit 256M Bit NAND Flash Memory Samsung

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K9W8G08U1M Features

K9W8G08U1M General Description

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