K9W8G08U1M 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory

Samsung

Description

K9W8G08U1M K9K4G08Q0M K9K4G08U0M K9K4G16Q0M K9K4G16U0M FLASH MEMORY Document Title 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory Revision History.
Offered in 512Mx8bit or 256Mx16bit, the K9XXGXXXXM is 4G bit with spare 128M bit capacity.

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Datasheet Specifications

Part number: K9W8G08U1M
Manufacturer: Samsung
File Size: 601.67 KB
Datasheet: K9W8G08U1M_Samsungsemiconductor.pdf
Description: 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory

Features

* Voltage Supply -1.8V device(K9K4GXXQ0M): 1.70V~1.95V -3.3V device(K9XXGXXUXM): 2.7 V ~3.6 V
* Organization - Memory Cell Array -X8 device(K9XXG08XXM) : (512M + 16,384K)bit x 8bit -X16 device(K9XXG16XXM) : (256M + 8,192K)bit x 16bit - Data Register -X8 device(K9XXG08XXM): (2K + 64)b

Applications

* such as solid state file storage and other portable applications requiring non-volatility. An ultra high density solution having two 4Gb stacked with two chip selects is also available in standard TSOPI package. 2 K9W8G08U1M K9K4G08Q0M K9K4G08U0M K9K4G16Q0M K9K4G16U0M FLASH MEMORY PIN CONFIGURA

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K9W8G08U1M 512M Bit 256M Bit NAND Flash Memory Samsung

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