Datasheet Details
Part number:
K9W8G16U1M
Manufacturer:
Samsung
File Size:
661.50 KB
Description:
Nand Flash Memory
Features
* Voltage Supply -1.8V device(K9K4GXXQ0M): 1.70V~1.95V -3.3V device(K9XXGXXUXM): 2.7 V ~3.6 V
* Organization - Memory Cell Array -X8 device(K9XXG08XXM) : (512M + 16,384K)bit x 8bit -X16 device(K9XXG16XXM) : (256M + 8,192K)bit x 16bit - Data Register -X8 device(K9XXG08XXM): (2K + 64)b
K9W8G16U1M, Nand Flash Memory
Offered in 512Mx8bit or 256Mx16bit, the K9XXGXXXXM is 4G bit with spare 128M bit capacity.
Its NAND cell provides the most cost-effective solution for the solid state mass storage market.
A program operation can be performed in typical 300µs on the 2112byte(X8 device) or 1056-word(X16 device) page a
K9W8G08U1M K9K4G08Q0M K9K4G16Q0M K9K4G08U0M K9K4G16U0M www.DataSheet4U.com FLASH MEMORY Document Title 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 0.2 History 1.
Initial issue 1.
Add two-K9K4GXXU0M-YCB0/YIB0 Stacked Package 1.
The 3rd Byte ID after 90h ID read command is don’ t cared.
The 5th Byte ID after 90h ID read command is deleted.
1.
The K9W8G16U1M-YCB0,YIB0,PCB0,PIB0 is deleted in line up.
2.
Note is added.
(VIL can undershoot to -0.4V and VIH
K9W8G16U1M Distributor
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