K9W8G16U1M - Nand Flash Memory

Samsung

Datasheet Details

Offered in 512Mx8bit or 256Mx16bit, the K9XXGXXXXM is 4G bit with spare 128M bit capacity.

Voltage Supply -1.8V device(K9K4GXXQ0M): 1.70V~1.95V -3.3V device(K9XXGXXUXM): 2.7 V ~3.6 V.
Organization - Memory Cell Array -X8 device(K9XXG08XXM) : (512M + 16,384K)bit x 8bit -X16 device(K9XXG16XXM) : (256M + 8,192K)bit x 16bit - Data Register -X8 device(K9XXG08XXM): (2K + 64)bit x8bit -X16 device(K9XXG16XXM): (1K + 32)bit x16bit - Cache Register -X8 device(K9XXG08XXM) : (2K + 64)bit x8bit -X16 device(K9XXG16XXM) : (1K + 32)bit x16bit.
Automatic Program and Erase -.

📁 K9W8G16U1M Similar Datasheet

K9WAG08U1A - (K9xxG08UxA) 1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory (Samsung semiconductor)
K9WAG08U1M - (K9xxG08UxM) 1G x 8 Bit / 2G x 8 Bit NAND Flash Memory (Samsung semiconductor)

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Published: Feb 26, 2009 |