K9W8G16U1M Datasheet, Memory, Samsung

K9W8G16U1M Features

• Memory
• Voltage Supply -1.8V device(K9K4GXXQ0M): 1.70V~1.95V -3.3V device(K9XXGXXUXM): 2.7 V ~3.6 V
• Organization - Memory Cell Array -X8 device(K9XXG08XXM) : (512M + 16,384K

PDF File Details

Part number:

K9W8G16U1M

Manufacturer:

Samsung

File Size:

661.50kb

Download:

📄 Datasheet

Description:

Nand flash memory. Offered in 512Mx8bit or 256Mx16bit, the K9XXGXXXXM is 4G bit with spare 128M bit capacity. Its NAND cell provides the most cost-effec

K9W8G16U1M Application

• Applications such as solid state file storage and other portable applications requiring non-volatility. An ultra high density solution having two 4G

TAGS

K9W8G16U1M

Samsung

📁 Related Datasheet

K9W8G08U1M - 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory (Samsung)
K9W8G08U1M K9K4G08Q0M K9K4G08U0M K9K4G16Q0M K9K4G16U0M FLASH MEMORY Document Title 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory Revision History.

K9W4G08U1M - 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory (Samsung)
K9W4G08U1M K9K2G08Q0M K9K2G08U0M K9W4G16U1M K9K2G16Q0M K9K2G16U0M FLASH MEMORY Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revisi.

K9W4G16U1M - 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory (Samsung)
K9W4G08U1M K9K2G08Q0M K9K2G08U0M K9W4G16U1M K9K2G16Q0M K9K2G16U0M FLASH MEMORY Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revisi.

K9WAG08U1A - (K9xxG08UxA) 1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory (Samsung semiconductor)
.. K9WAG08U1A K9K8G08U0A K9NBG08U5A FLASH MEMORY K9XXG08UXA INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODU.

K9WAG08U1D - 4Gb D-die NAND Flash (Samsung)
..net Rev.0.2, May. 2010 K9F4G08U0D K9K8G08U0D K9K8G08U1D K9WAG08U1D Advance 4Gb D-die NAND Flash Single-Level-Cell (1bit/cell) data.

K9WAG08U1E - 4Gb E-die NAND Flash (Samsung)
SAMSUNG CONFIDENTIAL Rev.1.2, Jun. 2013 K9F4G08U0E K9K8G08U0E K9K8G08U1E K9WAG08U1E 4Gb E-die NAND Flash Single-Level-Cell (1bit/cell) datasheet SA.

K9WAG08U1F - 4Gb F-die NAND Flash (Samsung)
SAMSUNG CONFIDENTIAL Rev. 1.2, Jul. 2016 K9F4G08U0F K9K8G08U0F K9WAG08U1F 4Gb F-die NAND Flash Single-Level-Cell (1bit/cell) datasheet SAMSUNG ELECTRO.

K9WAG08U1M - (K9xxG08UxM) 1G x 8 Bit / 2G x 8 Bit NAND Flash Memory (Samsung semiconductor)
K9WAG08U1M K9K8G08U0M K9NBG08U5M FLASH MEMORY K9XXG08UXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT T.

K9WBG08U1M - FLASH MEMORY (Samsung)
K9WBG08U1M K9KAG08U0M K9NCG08U5M FLASH MEMORY K9XXG08XXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT T.

K903 - 2SK903-MR (Fuji Electric)
.. .. .. .. .. .. .. .