Datasheet Specifications
- Part number
- K9W4G16U1M
- Manufacturer
- Samsung
- File Size
- 641.65 KB
- Datasheet
- K9W4G16U1M_Samsungsemiconductor.pdf
- Description
- 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
Description
K9W4G08U1M K9K2G08Q0M K9K2G08U0M K9W4G16U1M K9K2G16Q0M K9K2G16U0M FLASH MEMORY Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revisi.Features
* Voltage Supply -1.8V device(K9K2GXXQ0M): 1.7V~1.95V -3.3V device(K9XXGXXUXM): 2.7 V ~3.6 VApplications
* such as solid state file storage and other portable applications requiring non-volatility. An ultra high density solution having two 2Gb stacked with two chip selects is also available in standard TSOPI package. 3 K9W4G08U1M K9K2G08Q0M K9K2G08U0M K9W4G16U1M K9K2G16Q0M K9K2G16U0M FLASH MEMORY PIK9W4G16U1M Distributors
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