K9W4G16U1M Datasheet (Samsung) - 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory

K9W4G16U1M, 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory

Offered in 256Mx8bit or 128Mx16bit, the K9K2GXXX0M is 2G bit with spare 64M bit capacity.

Its NAND cell provides the most costeffective solution for the solid state mass storage market.

A program operation can be performed in typical 300µs on the 2112byte(X8 device) or 1056-word(X16 device) page and

K9W4G08U1M K9K2G08Q0M K9K2G08U0M K9W4G16U1M K9K2G16Q0M K9K2G16U0M FLASH MEMORY Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History 1.

Initial issue 1.

IOL(R/B) of 1.8V device is changed.

-min.

Value: 7mA >3mA -typ.

Value: 8mA >4mA Draft Date Aug.

30.2001 Nov.

2001 Remark Advance Preliminary 0.2 1.

5th cycle of ID is changed : 40h > 44h 1.

Add WSOP Package Dimensions.

Add two-K9K2GXXU0M-YCB0/YIB0 Stack

K9W4G16U1M Features

* Voltage Supply -1.8V device(K9K2GXXQ0M): 1.7V~1.95V -3.3V device(K9XXGXXUXM): 2.7 V ~3.6 V

* Organization - Memory Cell Array -X8 device(K9K2G08X0M) : (256M + 8,192K)bit x 8bit -X16 device(K9K2G16X0M) : (128M + 4,096K)bit x 16bit - Data Register -X8 device(K9K2G08X0M): (2K + 64)bit