Datasheet4U.com

K9WAG08U1M - (K9xxG08UxM) 1G x 8 Bit / 2G x 8 Bit NAND Flash Memory

Samsung semiconductor

📥 Download Datasheet

K9WAG08U1M Datasheet Preview — Preview of K9WAG08U1M PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	K9WAG08U1M
Manufacturer	Samsung semiconductor
File Size	1.22 MB
Description	(K9xxG08UxM) 1G x 8 Bit / 2G x 8 Bit NAND Flash Memory
Datasheet	K9WAG08U1M_Samsungsemiconductor.pdf

K9WAG08U1M Product details

Description

Offered in 1G x 8bit, the K9K8G08U0M is a 8G-bit NAND Flash Memory with spare 256M-bit.

Features

Voltage Supply - 2.70V ~ 3.60V.
Organization - Memory Cell Array : (1G + 32M) x 8bit - Data Register : (2K + 64) x 8bit.
Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)Byte.
Page Read Operation - Page Size : (2K + 64)Byte - Random Read : 20µs(Max. ) - Serial Access : 25ns(Min. ).
K9NBG08U5M : 50ns(Min. ).
Fast Write Cycle Time - Page Program time : 200µs(Typ. ) - Block Erase Time : 1.5ms(Typ. ).
Command.

📁 K9WAG08U1M Similar Datasheet

K9WAG08U1D - 4Gb D-die NAND Flash (Samsung)
K9WAG08U1E - 4Gb E-die NAND Flash (Samsung)
K9WAG08U1F - 4Gb F-die NAND Flash (Samsung)
K9W4G08U1M - 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory (Samsung)
K9W4G16U1M - 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory (Samsung)
K9W8G08U1M - 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory (Samsung)
K9W8G16U1M - Nand Flash Memory (Samsung)
K9WBG08U1M - FLASH MEMORY (Samsung)

Other Datasheets by Samsung semiconductor

K9WAG08U1A - (K9xxG08UxA) 1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory

Published: Feb 21, 2006 |