K9WAG08U1M (K9xxG08UxM) 1G x 8 Bit / 2G x 8 Bit NAND Flash Memory

Samsung semiconductor

Description

K9WAG08U1M K9K8G08U0M K9NBG08U5M FLASH MEMORY K9XXG08UXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT T.
Offered in 1G x 8bit, the K9K8G08U0M is a 8G-bit NAND Flash Memory with spare 256M-bit.

📥 Download Datasheet

K9WAG08U1M Datasheet Preview — Preview of K9WAG08U1M PDF

Datasheet Specifications

Part number: K9WAG08U1M
Manufacturer: Samsung semiconductor
File Size: 1.22 MB
Datasheet: K9WAG08U1M_Samsungsemiconductor.pdf
Description: (K9xxG08UxM) 1G x 8 Bit / 2G x 8 Bit NAND Flash Memory

Features

* Voltage Supply - 2.70V ~ 3.60V
* Organization - Memory Cell Array : (1G + 32M) x 8bit - Data Register : (2K + 64) x 8bit
* Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)Byte
* Page Read Operation - Page Size : (2K + 64)Byte -

Applications

* where Product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice.

K9WAG08U1M Distributors

📁 Related Datasheet

K9WAG08U1D K9WAG08U1E K9WAG08U1F K9W4G08U1M K9W4G16U1M K9W8G08U1M

📌 All Tags

K9WAG08U1M K9xxG08UxM Bit Bit NAND Flash Memory Samsung semiconductor

Samsung semiconductor K9WAG08U1M-like datasheet

K9WAG08U1A