K9W4G08U1M - 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory

Samsung

Datasheet Details

Part number	K9W4G08U1M
Manufacturer	Samsung
File Size	641.65 KB
Description	256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
Datasheet	K9W4G08U1M_Samsungsemiconductor.pdf

Offered in 256Mx8bit or 128Mx16bit, the K9K2GXXX0M is 2G bit with spare 64M bit capacity.

Voltage Supply -1.8V device(K9K2GXXQ0M): 1.7V~1.95V -3.3V device(K9XXGXXUXM): 2.7 V ~3.6 V.
Organization - Memory Cell Array -X8 device(K9K2G08X0M) : (256M + 8,192K)bit x 8bit -X16 device(K9K2G16X0M) : (128M + 4,096K)bit x 16bit - Data Register -X8 device(K9K2G08X0M): (2K + 64)bit x8bit -X16 device(K9K2G16X0M): (1K + 32)bit x16bit - Cache Register -X8 device(K9K2G08X0M): (2K + 64)bit x8bit -X16 device(K9K2G16X0M): (1K + 32)bit x16bit.
Automatic Program and Erase - Pag.

📁 K9W4G08U1M Similar Datasheet

K9WAG08U1A - (K9xxG08UxA) 1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory (Samsung semiconductor)
K9WAG08U1M - (K9xxG08UxM) 1G x 8 Bit / 2G x 8 Bit NAND Flash Memory (Samsung semiconductor)

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Published: Apr 25, 2005 |