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H5RS5223CFR 512Mbit (16Mx32) GDDR3 SDRAM H5RS5223CFR This document is a general product description and is subject to change without notice. Hynix Se

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512Mb DDR2 SDRAM 512Mb DDR2 SDRAM Lead-Free&Halogen-Free (RoHS Compliant) H5PS5182KFR-xxC H5PS5162KFR-xxC H5PS5182KFR-xxI H5PS5162KFR-xxI H5PS5182KFR

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Data Sheet, Rev. 1.2, June 2004 HYB25D512[40/80/16]0B[C/T] HYB25D512[40/80/16]0B[E/F] 512Mbit Double Data Rate SDRAM DDR SDRAM Memory Products Never s

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ELECTRONICS March. 2003 San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 512Mb/256Mb

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White Electronic Designs W3EG7266S-AD4 -BD4 PRELIMINARY* 512MB – 64Mx72 DDR SDRAM UNBUFFERED ECC w/PLL FEATURES Double-data-rate architecture DDR200

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DATA SHEET www.DataSheet4U.com 512MB Unbuffered DDR2 SDRAM DIMM EBE51UD8ABFA (64M words × 64 bits, 1 Rank) Description The EBE51UD8ABFA is 64M words

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PRELIMINARY DATA SHEET www.DataSheet4U.com 512MB Unbuffered DDR2 SDRAM HYPER DIMM EBE51UD8ABFV (64M words × 64 bits, 1 Rank) Description The EBE51U

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DATA SHEET www.DataSheet4U.com 512MB Unbuffered DDR2 SDRAM DIMM EBE51UD8AEFA (64M words × 64 bits, 1 Rank) Description The EBE51UD8AEFA is 64M words

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www.DataSheet4U.com 512Mb DDR SDRAM H5DU5182ETR H5DU5162ETR This document is a general product description and is subject to change without notice.

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512MBit MOBILE SDR SDRAMs based on 8M x 4Bank x16I/O Document Title 4Bank x 8M x 16bits Synchronous DRAM Revision History Revision No. 0.1 0.2 1.0 1.

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www.DataSheet4U.net 512Mbit MOBILE DDR SDRAM based on 4M x 4Bank x32 I/O Specification of 512Mb (16Mx32bit) Mobile DDR SDRAM Memory Cell Array - Or

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H5PS5162GFR Series 512Mb DDR2 SDRAM H5PS5182GFR-xxC H5PS5182GFR-xxI H5PS5182GFR-xxL H5PS5182GFR-xxJ H5PS5162GFR-xxC H5PS5162GFR-xxI H5PS5162GFR-xxL H

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H5TQ(S)5163MFR 512Mb DDR3 SDRAM H5TQ(S)5163MFR ** Since DDR3 Specification has not been defined completely yet in JEDEC, this document may contain ite

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H5TQ(S)5163MFR 512Mb DDR3 SDRAM H5TQ(S)5163MFR ** Since DDR3 Specification has not been defined completely yet in JEDEC, this document may contain ite

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H5TQ(S)5163MFR 512Mb DDR3 SDRAM H5TQ(S)5163MFR ** Since DDR3 Specification has not been defined completely yet in JEDEC, this document may contain ite

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W949D6KB / W949D2KB 512Mb Mobile LPDDR Table of Contents- 1. GENERAL DESCRIPTION

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HY27US(08/16)121A Series HY27SS(08/16)121A Series 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Document Title 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash M

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NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG 512Mb DDR2 SDRAM C-Die Features • 1.8V ± 0.1V Power Supply Voltage • Programmable CAS Latency: 3, 4, 5, and

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NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG 512Mb DDR2 SDRAM C-Die Features • 1.8V ± 0.1V Power Supply Voltage • Programmable CAS Latency: 3, 4, 5, and

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NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG 512Mb DDR2 SDRAM C-Die Features • 1.8V ± 0.1V Power Supply Voltage • Programmable CAS Latency: 3, 4, 5, and

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