UNISONIC TECHNOLOGIES CO., LTD 5302D NPN SILICON.
Fairchild Semiconductor
KSC5302DI - NPN Epitaxial Silicon Transistor
KSC5302DI KSC5302DI High Voltage & High Speed Power Switch Application • Built-in Free-wheeling Diode makes efficient anti saturation operation Suita.
Fairchild Semiconductor
KSC5302DM - NPN Epitaxial Silicon Transistor
KSC5302DM KSC5302DM High Voltage & High Speed Power Switch Application High breakdown Voltage :BVCBO=800V Built-in Free-wheeling Diode makes efficien.
grenergy
GR5302DS - Monitor and Timing Management
GR5302 Monitor and Timing Management for 4-Loop NiMH Battery Charger Features Description The GR5302 is ideal for standalone charging of 4-loop NiMH p.
Fairchild Semiconductor
KSC5302D - NPN Epitaxial Silicon Transistor
KSC5302D KSC5302D High Voltage High Speed Power Switch Application High Breakdown Voltage : BVCBO=800V Built-in Free-wheeling Diode makes efficient a.
Taiwan Semiconductor
TSC5302D - High Voltage NPN Transistor
www.DataSheet4U.com Preliminary TSC5302D High Voltage NPN Transistor with Diode Pin assignment: 1. Base 2. Collector 3. Emitter BVCEO = 400V BVCBO =.
Unisonic Technologies
5302D - HIGH VOLTAGE NPN TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 5302D NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR WITH DIODE DESCRIPTION The UTC 5302D are series of NPN s.
grenergy
GR5302DA - Monitor and Timing Management
GR5302 Monitor and Timing Management for 4-Loop NiMH Battery Charger Features Description The GR5302 is ideal for standalone charging of 4-loop NiMH p.
grenergy
GR5302DA - Monitor and Timing Management
GR5302 Monitor and Timing Management for 4-Loop NiMH Battery Charger Features Description The GR5302 is ideal for standalone charging of 4-loop NiMH p.
International Rectifier
IRFH5302DPBF - Power MOSFET
IRFH5302DPbF VDS RDS(on) max (@VGS = 10V) VSD max (@IS = 5.0A) trr (typical) ID (@Tc(Bottom) = 25°C) 30 V 2.5 mΩ 0.65 V 19 ns h 100 A Applic.
International Rectifier
IRFH5302DTRPBF - Power MOSFET
IRFH5302DPbF VDS RDS(on) max (@VGS = 10V) VSD max (@IS = 5.0A) trr (typical) ID (@Tc(Bottom) = 25°C) 30 V 2.5 mΩ 0.65 V 19 ns h 100 A Applic.
Vishay
SiZF5302DT - Dual N-Channel MOSFET
www.vishay.com SiZF5302DT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET 3.3 mm PowerPAIR® 3 x 3FS V+ V+ LSG 3 4 GND 2 5 1 6 V+ 1 3.3 .
International Rectifier
IRFH5302D - Power MOSFET
IRFH5302DPbF VDS RDS(on) max (@VGS = 10V) VSD max (@IS = 5.0A) trr (typical) ID (@Tc(Bottom) = 25°C) 30 V 2.5 mΩ 0.65 V 19 ns h 100 A Applic.