SiZF5302DT Description
(Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration 30 0.0032 0.0053 6.7 100 a Dual.
SiZF5302DT Key Features
- TrenchFET® Gen V power MOSFET
- Symmetric dual N-channel
- Flip chip technology optimal thermal design
- High side and low side MOSFETs form optimized bination for 50 % duty cycle
- Optimized RDS
- Qg and RDS
- Qgd FOM elevates efficiency for high frequency switching
- 100 % Rg and UIS tested
- Material categorization: for definitions of pliance