SiZF4800LDT Description
(Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration 80 0.019 0.0238 7.1 36 a Dual.
SiZF4800LDT Key Features
- TrenchFET® Gen IV power MOSFET
- Symmetric dual n-channel
- Flip chip technology optimal thermal design
- High side and low side MOSFETs form optimized bination for 50 % duty cycle
- Optimized RDS
- Qg and RDS
- Qgd FOM elevates efficiency for high frequency switching
- 100 % Rg and UIS tested
- Material categorization: for definitions of pliance