SiZF640DT Description
() at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) a Configuration 40 0.00137 0.00240 30 159 Dual.
SiZF640DT Key Features
- TrenchFET® Gen IV power MOSFET
- 100 % Rg and UIS tested
- Symmetric dual N-channel
- Flip chip technology optimal thermal design
- High side and low side MOSFETs form optimized
- Material categorization: for definitions of pliance