SiZF640DT
SiZF640DT is Symmetric Dual N-Channel MOSFET manufactured by Vishay.
FEATURES
- Trench FET® Gen IV power MOSFET
- 100 % Rg and UIS tested
- Symmetric dual N-channel
- Flip chip technology optimal thermal design
- High side and low side MOSFETs form optimized bination for 50 % duty cycle
- Material categorization: for definitions of pliance please see .vishay./doc?99912
APPLICATIONS
- Buck-boost
- Half-bridge synchronous rectification
- Tele DC/DC
- Motor drive control
N-Channel 1 MOSFET G1 GR
G2
D1 S1-D2
N-Channel 2
MOSFET
S2
ORDERING INFORMATION
Package Lead (Pb)-free and halogen-free
Power PAIR 6 x 5FS Si ZF640DT-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-source voltage
Gate-source voltage
+20, -16
TC = 25 °C
Continuous drain current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
TA = 70 °C
127 41 b, c 33 b, c
Pulsed drain current (t = 100 μs)
Continuous source-drain diode...
