SiZF300DT Description
SiZF300DT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode PowerPAIR® 3 x 3F D1 S2 3.3 mm 1 3.3 mm Top View PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ.
SiZF300DT Key Features
- TrenchFET® Gen IV power MOSFET
- SkyFET® low side MOSFET with integrated Schottky
- 100 % Rg and UIS tested
- Material categorization: for definitions of pliance please see .vishay./doc?99912