5804 Datasheet | Specifications & PDF Download

1N5802(US), 1N5804(US), 1N5806(US) Rectifier Diode Series Ultrafast Recovery Features  Popular JEDEC registered series  Void-less hermetically seal

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File 1'\10. 407 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __ OO(]5LJD Solid State Division Power Transistors 2N5804 2N5805 High-vol

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1N5802US thru 1N5806US www.DataSheet4U.com SCOTTSDALE DIVISION SURFACE MOUNT VOIDLESSHERMETICALLY-SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS DESCRI

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RECTIFIER, up to 150V, 2.5A, 25ns 1N5802 1N5804 1N5806 TEL:805-498-2111 FAX:805-498- 3804 WEB:http://www.semtech.com MECHANICAL G111 Dimensions

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Certificate TH97/10561QM Certificate TW00/17276EM 1N5802 - 1N5806 PRV : 50 - 150 Volts Io : 2.5 Amperes GLASS PASSIVATED JUNCTION ULTRA FAST RECTIF

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Features  N-Channel，5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  VitoMOS® Technology  100% Avalanche tes

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PT5800 Series 18-A 5-V Input Adjustable Integrated Switching Regulator SLTS171A JANUARY 2003 - REVISED - MARCH 2003 Features • • • • • • • • • 5V Inp

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5804 BiMOS II UNIPOLAR STEPPER-MOTOR TRANSLATOR/DRIVER OUTPUT B 1 2 3 4 LOGIC GROUND OUTPUT 5 6 7 8 12 11 10 9 GROUND STEP INPUT HALF-STEP ONE-PHASE

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5804 BiMOS II UNIPOLAR STEPPER-MOTOR TRANSLATOR/DRIVER OUTPUT B 1 2 3 4 LOGIC GROUND OUTPUT 5 6 7 8 12 11 10 9 GROUND STEP INPUT HALF-STEP ONE-PHASE

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High breakdown voltag

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1N5802US/1N5804US/1N5806US www.DataSheet4U.com Superfast Recovery Diodes Surface Mount (US) POWER DISCRETES Description Quick reference data VR 50 -

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NTD5804N, NTDV5804N, SVD5804N Power MOSFET 40 V, 69 A, Single N−Channel, DPAK Features • Low RDS(on) • High Current Capability • Avalanche Energy Spe

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Technical Data DIODE maximum ratings Voltage, Reverse (VR) Voltage, Reverse Peak (VRM) Current at VR = OV (IO) Current Average Rectified (IF) Curren

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1N5802-1N5806 High-reliability discrete products and engineering services since 1977 HIGH EFFICIENCY RECTIFIERS FEATURES  Available as “HR” (high

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www.DataSheet4U.com ELP 18/4/10 Core and Accessories (With Clamp Recess) Core set EELP 18 Combination: ELP 18/4/10 with ELP 18/4/10 I In accordance wi

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1N5802, 1N5804, 1N5806 Available on commercial versions VOIDLESS HERMETICALLY SEALED ULTRAFAST RECOVERY GLASS RECTIFIERS Qualified per MIL-PRF-19500

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1N5802(US), 1N5804(US), 1N5806(US) Rectifier Diode Series Ultrafast Recovery Features  Popular JEDEC registered series  Void-less hermetically seal

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SENSITRON ___ SEMICONDUCTOR TECHNICAL DATA DATA SHEET 158, REV. F.4 1N5802/US thru 1N5806/US StanUdLarTdRAFAST RECOVERY RECTIFIERS AVAILABLE AS 1N, J

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VS5804AP-VB VS5804AP-VB Datasheet N-Channel 60 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () 0.003 at VGS = 10 V 60 0.005 at

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