< DIPIPM > SLIMDIP-L TRANSFER MOLDING TYPE INSULATED TYPE OUTLINE MAIN FUNCTION AND RATINGS  RC-IGBT inverter bridge for three phase DC-to-AC power

Xiner 1350V，25A，Trench-FS IGBT SP25N135T Features  Advanced Trench+FS (Field Stop) IGBT technology  Low Collector-Emitter Saturation voltage, typ

CRG60T60AN3H CRG60T60AN3H FS IGBT ， VCES 600 V ，。 IC 60 A RoHS 。 Ptot （TC=25℃） 403 W VCE(sat) 1.85 V ：TO-3P（N） ● FS ，； ● ：VCE(

www.DataSheet4U.com Agilent 2.5 Amp Output Current IGBT Gate Drive Optocoupler Data Sheet HCPL-3120 HCPL-J312 HCNW3120 Functional Diagram N/C 1 AN

< DIPIPM > SLIMDIP-S TRANSFER MOLDING TYPE INSULATED TYPE OUTLINE MAIN FUNCTION AND RATINGS  RC-IGBT inverter bridge for three phase DC-to-AC power

Xiner 1200V，15A，Trench-FS IGBT XNS15N120T Features  Advanced Trench+FS (Field Stop) IGBT technology  Low Collector-Emitter Saturation voltage, ty

SGT40N60NPFDPN_Datasheet 40A, 600V FIELD STOP IGBT DESCRIPTION SGT40N60NPFDPN using Field Stop IGBT technology, offer the optimum performance for indu

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MOSFET 600V 200A IGBT Número de parte: GT30J127 Descripción: IGBT PARA APLICACIONES DE PANTALLAS DE TELEVISION DE PLASMA TO-220 Voltaje: 600V Corrient

Data Sheet HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S January 2000 File Number 4492.2 45A, 600V, UFS Series N-Channel IGBT This family of MOS gated hig

Silicon FS Trench IGBT ○R BT40T60 ANFU General Description： VCES 600 V Using HUAJING's proprietary trench design and advanced Field Stop (FS) I

Silan Microelectronics SGT60N60FD1PN/P7/PS/PT_Datasheet 60A, 600V FIELD STOP IGBT DESCRIPTION SGT60N60FD1PN/P7/PS/PT adopts Field Stop IGBT technolog

SGA45T60SMD 45A 600V Field Stop Trench IGBT SGA45T60SMD 45A 600V Field Stop Trench IGBT Features • Field Stop Trench Technology • Typical VCE(sat) =

http://www.fujielectric.com/products/semiconductor/ 6MBP30VSC060-50 IGBT Modules IGBT MODULE (V series) 600V / 30A / IPM Features Low-side IGBTs a

Low VCE(sat) IGBT High speed IGBT IXGH/IXGM 30 N60 IXGH/IXGM 30 N60A VCES 600 V 600 V IC25 50 A 50 A VCE(sat) 2.5 V 3.0 V Symbol Test Conditions

DXG60N65HSE IGBT Features  650V 60A,VCE(sat)(typ.) = 2.3 V@60A  Field Stop IGBT Technology.  10μs Short Circuit Capability.  Square RBSOA.  Posi

http://www.fujielectric.com/products/semiconductor/ 6MBP15VSC060-50 IGBT Modules IGBT MODULE (V series) 600V / 15A / IPM Features Low-side IGBTs a

Features: •1350V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operatio

Resonant Switching Series Reverse conducting IGBT with monolithic body diode IHW20N120R3 Data sheet Industrial Power Control IHW20N120R3 Resonant Sw

CRG40T65AK5SD CRG40T65AK5SD FS IGBT ， VCES ，。 IC 650 V 40 A RoHS 。 Ptot （TC=25℃） 250 W VCE(sat) 1.40 V ： TO-247 ● FS ， ； ● ：VCE(