6.0A Datasheet | Specifications & PDF Download

MBR2060CT-MBR20100CT High-reliability discrete products and engineering services since 1977 20A SCHOTTKY RECTIFIERS FEATURES  Available as “HR” (h

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ABF22 THRU ABF210 Technical Data Data Sheet N1841, Rev. A ABF22 THRU ABF 210 SINGLE PHASE 2.0AMP SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER ABF

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Product Folder Sample & Buy Technical Documents Tools & Software Support & Community SN65HVD1050A-Q1 SLLS888B – JUNE 2008 – REVISED OCTOBER 2016

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PT320AT01-1 Product Specification Model name: PT320AT01-1 Ver. 1.0 Date: 29. Mar.2017 ( ) Preliminary Specification ( v ) Approval Specification A

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MOSFET 600V 200A IGBT Número de parte: GT30J127 Descripción: IGBT PARA APLICACIONES DE PANTALLAS DE TELEVISION DE PLASMA TO-220 Voltaje: 600V Corrient

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600 V, 1.0 A Ultrafast Rectifier MURHS160T3, NRVUHS160V, SURHS8160 Features and Benefits • Ultrafast 35 Nanosecond Recovery Times • 175°C Operating J

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Elektronische Bauelemente 1.5KE Series Voltage 6.8V ~ 550V 1500W Peak Power TVS A suffix of -C specifies halogen & RoHS compliant FEATURES Plasti

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® WON-TOP ELECTRONICS Features  Schottky Barrier Chip  Guard Ring for Transient and ESD Protection  Surge Overload Rating to 150A Peak  Low Power

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Silicon N-Channel Power MOSFET CS630 A4H ○R General Description： CS630 A4H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligne

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EG1000AE  5mA-60mA， 1000AE IC，， ±3%； ，，，  ； ，，。  EMC ；  PCB ；  ，；  ：ESOP-8；     GND1 REXT1 NC NC OUT NC NC

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20N60/F20N60/20N60D 20A 600V N-channel Enhancement Mode Power MOSFET 1 Description These silicon N-channel Enhanced VDMOSFETs are obtained by the sel

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Silicon Junction FETs XIAOSHENG Symbol: Drain LH03 Series of Products interconvert: www.datasheet4u.com 2SK30A Gate Source Silicon N-Chinnel Jun

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® WON-TOP ELECTRONICS SR5150 – SR5200 5.0A HIGH VOLTAGE SURFACE MOUNT SCHOTTKY BARRIER DIODE Pb Features  Low Forward Voltage  Epitaxial Constru

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® WON-TOP ELECTRONICS Features  Diffused Junction  Low Forward Voltage Drop  High Current Capability  High Reliability  High Surge Current Capabi

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S-25A640A, S-25A640B www.ablic.com www.ablicinc.com © ABLIC Inc., 2008-2014 FOR AUTOMOTIVE 125°C OPERATION SPI SERIAL E2PROM Rev.3.2_02 This IC is

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Cell Type UR18650A Specifications Nominal Capacity Nominal Voltage Charging Method Charging Voltage Charging Current Charging Time Ambient Temperature

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SCOTTSDALE DIVISION 1N6267 thru 1N6303A 1.5KE6.8 thru 1.5KE400A Unidirectional & Bidirectional Transient Voltage Suppressors WWW.Microsemi .COM DES

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SCOTTSDALE DIVISION 1N6267 thru 1N6303A 1.5KE6.8 thru 1.5KE400A Unidirectional & Bidirectional Transient Voltage Suppressors WWW.Microsemi .COM DES

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1517 5-TAP DIP DELAY LINE TD/TR = 3 (SERIES 1517) FEATURES • • • • • • 5 taps of equal delay increment Delays as large as 300ns available Low DC resi

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SCOTTSDALE DIVISION 1N6267 thru 1N6303A 1.5KE6.8 thru 1.5KE400A Unidirectional & Bidirectional Transient Voltage Suppressors WWW.Microsemi .COM DES

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