GT60N321 TOSHIBA Insulated Gate Bipolar Transistor.
Toshiba Semiconductor
60N321 - GT60N321
GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High-Power Switching Applications Fourth Generation IGBT Unit: mm.
Toshiba Semiconductor
GT60N321 - Silicon N-Channel IGBT
GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High Power Switching Applications The 4th Generation Unit: mm · ·.
