60N321 Datasheet | Specifications & PDF Download

60N321 GT60N321

GT60N321 TOSHIBA Insulated Gate Bipolar Transistor.

GT60N321

GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High-Power Switching Applications Fourth Generation IGBT Unit: mm

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Silicon N-Channel IGBT

GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High Power Switching Applications The 4th Generation Unit: mm · ·

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