GT60N321 Datasheet - Toshiba Semiconductor

GT60N321 Silicon N-Channel IGBT

GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High Power Switching Applications The 4th Generation Unit: mm FRD included between emitter and collector Enhancement-mode High speed IGBT : tf = 0.25 µs (typ.) (IC = 60 A) FRD : trr = 0.8 µs (typ.) (di/dt = 20 A/µs) Low saturation voltage: VCE (sat) = 2.3 V (typ.) (IC = 60 A) Maximum Ratings (Ta = 25°C) Characteristics Collector-Emitter Voltage Gate-Emitter Voltage Collector Cu.

GT60N321_ToshibaSemiconductor.pdf