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GT60N321 Silicon N-Channel IGBT

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Description

GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High Power Switching Applications The 4th Generation Unit: mm

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Applications

* The 4th Generation Unit: mm
* FRD included between emitter and collector Enhancement-mode High speed IGBT : tf = 0.25 µs (typ. ) (IC = 60 A) FRD : trr = 0.8 µs (typ. ) (di/dt =
* 20 A/µs) Low saturation voltage: VCE (sat) = 2.3 V (typ. ) (IC = 60 A) Maximum Ratings (Ta =

GT60N321 Distributors

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📌 All Tags

Silicon N-Channel IGBT Toshiba Semiconductor
Toshiba Semiconductor GT60N321-like datasheet