Part number:
GT60M322
Manufacturer:
File Size:
190.73 KB
Description:
Silicon n-channel igbt.
Datasheet Details
Datasheet Details
Part number:
GT60M322
Manufacturer:
File Size:
190.73 KB
Description:
Silicon n-channel igbt.
GT60M322, Silicon N-Channel IGBT
GT60M322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M322 Voltage Resonance Inverter Switching Application Current Resonance Inverter Switching Application Enhancement mode type High speed : tf = 0.15 µs (typ.) (IC = 60 A) Low saturation voltage : VCE (sat) = 2.3 V (typ.) (IC = 60 A) FRD included between emitter and collector TO-3P(LH) (Toshiba package name) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector
📁 Related Datasheet
📌 All Tags