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GT60M322 Datasheet - Toshiba

GT60M322 Silicon N-Channel IGBT

GT60M322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M322 Voltage Resonance Inverter Switching Application Current Resonance Inverter Switching Application Enhancement mode type High speed : tf = 0.15 µs (typ.) (IC = 60 A) Low saturation voltage : VCE (sat) = 2.3 V (typ.) (IC = 60 A) FRD included between emitter and collector TO-3P(LH) (Toshiba package name) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector.

GT60M322_Toshiba.pdf

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Datasheet Details

Part number:

GT60M322

Manufacturer:

Toshiba ↗

File Size:

190.73 KB

Description:

Silicon n-channel igbt.

GT60M322 Distributor

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GT60M322 GT60M322 Silicon N-Channel IGBT Toshiba