Datasheet Specifications
- Part number
- GT60M303
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 414.76 KB
- Datasheet
- GT60M303_ToshibaSemiconductor.pdf
- Description
- Silicon N-Channel IGBT
Description
GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit: mm z Fourth generation I.
Applications
* Unit: mm z Fourth generation IGBT z FRD included between emitter and collector z Enhancement mode type z High speed IGBT : tf = 0.25μs (TYP. ) FRD : trr = 0.7μs (TYP. ) z Low saturation voltage : VCE (sat) = 2.1V (TYP. ) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT ColGT60M303 Distributors
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