GT60M303 Datasheet, Igbt, Toshiba Semiconductor

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Part number:

GT60M303

Manufacturer:

Toshiba ↗ Semiconductor

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414.76kb

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📄 Datasheet

Description:

Silicon n-channel igbt.

GT60M303 Application

• Applications Unit: mm z Fourth generation IGBT z FRD included between emitter and collector z Enhancement mode type z High speed IGBT : tf = 0.25μ

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GT60M303

Toshiba Semiconductor

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