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GT60J323 Datasheet - Toshiba Semiconductor

GT60J323 Silicon N-Channel IGBT

GT60J323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J323 Current Resonance Inverter Switching Application Enhancement mode type High speed : tf = 0.16 μs (typ.) (IC = 60A) Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 60A) FRD included between emitter and collector Fourth generation IGBT TO-3P(LH) (Toshiba package name) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter v.

GT60J323-ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

GT60J323

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

169.69 KB

Description:

Silicon n-channel igbt.

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GT60J323 GT60J323 Silicon N-Channel IGBT Toshiba Semiconductor