GT60M324 Datasheet, Igbt, Toshiba

PDF File Details

Part number:

GT60M324

Manufacturer:

Toshiba ↗

File Size:

176.26kb

Download:

📄 Datasheet

Description:

Silicon n-channel igbt.

TAGS

📁 Related Datasheet

GT60M322 - Silicon N-Channel IGBT (Toshiba)
GT60M322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M322 Voltage Resonance Inverter Switching Application Current Resonance.

GT60M323 - Silicon N-Channel IGBT (Toshiba)
GT60M323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M323 Voltage Resonance Inverter Switching Application Unit: mm • • • • .

GT60M301 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
.

GT60M302 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
.

GT60M303 - Silicon N-Channel IGBT (Toshiba Semiconductor)
GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit: mm z Fourth generation I.

GT60M101 - Insulated Gate Bipolar Transistor (ETC)
.

GT60M104 - Silicon N-Channel IGBT (Toshiba Semiconductor)
.

GT605G - 6 Amp Glass Passivated Quick Connect Rectifier (TAITRON)
6 Amp Glass Passivated Quick Connect Rectifier .. GT605G~ GT610G 6 Amp Glass Passivated Quick Connect Rectifier Features • • • • Pac.

GT60J321 - Silicon N-Channel IGBT (Toshiba)
GT60J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J321 The 4th Generation Soft Switching Applications Unit: mm · · · En.

GT60J322 - Silicon N-Channel IGBT (Toshiba Semiconductor)
GT60J322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J322 The 4th Generation Soft Switching Applications Unit: mm • • Enha.